Abstract:In nanoscale CMOS process, integrated circuits (ICs) face serious gate reliability issues such as the damage of electrostatic discharge (ESD). The RC-triggered silicon-controlled rectifier (SCR) is widely studied for the high turn-on efficiency and discharge capability. However, the large gate leakage current of MOS capacitor in the traditional RC network in nanoscale process is not desired. In this work, a modified detection circuit with feedback technique is proposed. The leakage current is reduced to 16 nA … Show more
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