2019
DOI: 10.1016/j.ijleo.2019.162982
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A modified version of BRDF model based on Kubelka-Munk theory for coating materials

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Cited by 13 publications
(6 citation statements)
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“…This might originate from the reduced hole density of Co in the In 2 O 3 /Co 3 O 4 heterostructure due to the strong coupling between Co 3 O 4 and In 2 O 3 . At the same time, according to the results of UV–vis spectroscopy (Figure S6a) and Kubelka–Munk formula, the band gap of the system gradually increases with the increase in the In 2 O 3 content (Figure S6b). This also proves the carrier transfer between Co 3 O 4 and In 2 O 3 , and then, the built-in electric field is formed at the contact interface of the two semiconductors, which will make the resistance change of In 2 O 3 /Co 3 O 4 NSs in the gas sensing process more obvious in the gas sensing process.…”
Section: Resultsmentioning
confidence: 92%
“…This might originate from the reduced hole density of Co in the In 2 O 3 /Co 3 O 4 heterostructure due to the strong coupling between Co 3 O 4 and In 2 O 3 . At the same time, according to the results of UV–vis spectroscopy (Figure S6a) and Kubelka–Munk formula, the band gap of the system gradually increases with the increase in the In 2 O 3 content (Figure S6b). This also proves the carrier transfer between Co 3 O 4 and In 2 O 3 , and then, the built-in electric field is formed at the contact interface of the two semiconductors, which will make the resistance change of In 2 O 3 /Co 3 O 4 NSs in the gas sensing process more obvious in the gas sensing process.…”
Section: Resultsmentioning
confidence: 92%
“…The valence bands (VBs) were studied by XPS spectrum ( Figure 6 a–b), whereas the bandgap ( E g ) values (Figure 6d) were estimated according to the Kubelka–Munk (KM) theory. [ 21 ] Then the VB and CB potentials (eV vs NHE) and bandgap of pristine TiO 2 and Cu 2 O were estimated and is shown in Figure 6e–f with their crystal structures. Considering the band bending and band edge shift phenomenon caused by the formation of dipole at the formed interface, [ 22 ] the more precise band alignment was determined by calculating the values of the VB offset (Δ E VBO ), and the conduction band offset (Δ E CBO ) as well as the energy difference between core level (Δ E CL ) followed as the method proposed by Kraut et al [ 23 ] Figure 6d shows the E g values obtained by extrapolating a linear fit of Tauc plots curve made by ( αhυ ) n versus photon energy ( hυ ), where n equals 0.5 for TiO 2 and 2 for Cu 2 O due to their semiconductor types [17b] .…”
Section: Resultsmentioning
confidence: 99%
“…In Figure 11a, according to the results of UV-DRS, the band gap (E g ) is calculated according to Kubellka-Munk formula. [52][53][54] The bandgap of TiO 2 -C, TiO 2 -H40, TiO 2 -DEG10, and TiO 2 -DEG20 are 3.04, 2.94, 2.52, and 2.05 eV, respectively. The addition of DEG can significantly narrow the bandgap of TiO 2 .…”
Section: Resultsmentioning
confidence: 99%