A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Abstract

A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology. © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. IEEE Electron Device Letters Permanent link to this version:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-148621 > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1Abstract-A monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented. The opamp has been used in an inverting negative feedback amplifier configuration. Wide temperature operation of the amplifier is demonstrated from 25°C to 500°C. The measured closed loop gain is around 40 dB for all temperatures whereas the 3dB bandwidth increases from 270 kHz at 25°C to 410 kHz at 500°C. The opamp achieves 1.46 V/µs slew rate and 0.25% Total Harmonic Distortion (THD). This is the first report on high temperature operation of a fully integrated SiC bipolar opamp which demonstrates the feasibility of this technology for high temperature analog integrated circuits (ICs).

Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation

“…Silicon carbide (SiC) is a wide band gap semiconductor suitable for high temperature, high-frequency and high-power applications [1,2]. The 4H polytype of SiC is preferred as a material for electronic components due to the high and isotropic mobility of carriers.…”

Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC

“…To overcome this problem an opamp with higher loop-gain [11] should be used along with a more accurate start-up circuit with lower current level.…”

Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications

“…SiC ICs based on junction field-effect transistor (JFET), measured at temperatures exceeding 800 ○ C, were reported in [10], including an inverter-based 26-transistor 11-stage ring oscillator; however, bipolar junction transistors (BJTs) have better driving capability and linearity and higher speed as compared to FETs [11]. Digital and analog ICs realized in bipolar SiC technology using emitter-coupled logic (ECL) have previously been demonstrated up to 500 ○ C [11][12][13][14], with a noise margin of 1 V [12]. An active down-conversion mixer realized using 4H-SiC BJT, for communication receivers, was recently reported working up to 500 ○ C [15].…”