A Monolithic CMOS 2368&amp;lt;tex&amp;gt;$pm$&amp;lt;/tex&amp;gt;30 MHz Transformer Based&amp;lt;tex&amp;gt;$Q$&amp;lt;/tex&amp;gt;-Enhanced Series-C Coupled Resonator Bandpass Filter

Kulyk, Jim; Haslett, J.W.

doi:10.1109/jssc.2005.862348

Cited by 48 publications

(28 citation statements)

References 18 publications

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“…The effects of the limited Q-factor of on-chip inductors in multi-pole BPFs are namely a significant drop in the insertion loss of the filter and a considerable reduction in the shape-factor of the filter ("shoulder droop") [20]. Obtaining a near ideal bandpass response requires inductors with quality factors of approaching 200 or more [21]. In fact, for the same bandwidth, as the order of the filter increases, the minimum tolerable Q-factor of inductors increases very rapidly [20].…”

Section: Q-enhanced Lc Bpfmentioning

confidence: 99%

“…In fact, for the same bandwidth, as the order of the filter increases, the minimum tolerable Q-factor of inductors increases very rapidly [20]. The best available monolithic inductor in silicon substrate achieves Q-factors in the range of 10 − 30 depending on inductance value and frequency [21]. Clearly, some form of enhancement is required to make viable integrated RF LC BPFs.…”

Section: Q-enhanced Lc Bpfmentioning

confidence: 99%

“…2.1, the negative resistance can be located in series or in parallel with the inductor. The location and the type of the negative resistance have a great impact on the passband distortion of Q-enhanced BPFs [16,20,21,23,24]. A very first-order model of an onchip inductor where only the series ohmic loss is taken into account is shown in Fig.…”

Section: Operationmentioning

confidence: 99%

“…It can be shown that the DR of a 2 nd order Q-enhanced LC BPF shown in Frequency dependent negative resistors [16] (c) A series LC tank with a constant series negative resistance [20] (d) A parallel LC tank with a constant negative resistance in series with its inductor [21] (e) A modified differential negative resistance [21,24]. …”

Section: Performancementioning

confidence: 99%

“…In fact, the addition of the negative resistance: 1) modifies the P 1dB of the circuit to P 1dB Q 0 /Q and 2) modifies the P n of the circuit to P n Q/Q 0 . Although there has been more than a decade research on these types of BPFs, most of the designs do not achieve enough DR which is to a first degree is due to the limited Q-factor of on-chip inductors [9,10,11,12,13,14,15,16,20,21,23,24,26,27,28,29,30,31,32,33]. …”

Section: Performancementioning

confidence: 99%

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Active N-path Filters: Theory and Design

Darvishi¹

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Section: Q-enhanced Lc Bpfmentioning

confidence: 99%

Section: Q-enhanced Lc Bpfmentioning

confidence: 99%

Section: Operationmentioning

confidence: 99%

Section: Performancementioning

confidence: 99%

Section: Performancementioning

confidence: 99%

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Active N-path Filters: Theory and Design

Darvishi¹

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Overview of Front‐End RF Passive Integration into SoCs

Hueber

Staszewski²

2010

Multi‐Mode/Multi‐Band RF Transceivers for Wireless Communications

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Harmonic fold back reduction at the N‐path filters

Hemati

Jannesari

2016

Circuit Theory & Apps

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Summary In this paper, a method is proposed to reduce harmonic fold back (HFB) problem of N‐path filters, without increasing the input reference clock (fCLK) frequency. The HFB at the N‐path filter is analyzed, and simple expressions are extracted to model this problem. Using the results of the analysis, an M‐of‐N‐path filter has been proposed that behaves like an M × N‐path filter in terms of HFB problem; however, the fCLK frequency of this structure is the same as an N‐path filter. To demonstrate the feasibility of the proposed idea, a 3‐of‐4‐path filter is designed, and its characteristics are compared with 4‐path and 12‐path filters by simulation. Impacts of different non‐idealities like clock‐phase error, mismatch, and parasitic capacitance are investigated. The transistor‐level implementation of this filter is performed in 0.18 µm Complementary Metal Oxide Semiconductor (CMOS) technology. The simulation results show that the filter has the pass‐band gain of 17 dB, tuning range of 0.2–1.2 GHz, −3 dB bandwidth of 25 MHz, quality factor of 8–48, 18 dB out‐of‐band rejection, 16 dB rejection of the third harmonic of switching frequency (fs), and the noise figure of 4.35 dB (using ideal Gm cells) and 6.95 dB (for practical Gm cells). The strongest harmonic folding to the filter pass‐band occurs around 11fs with the attenuation of 23.8 dB. Each Gm cell draws about 12.4 mA from 1.8 V supply, and the out‐of‐band IIP3 and P1 dB,CP are 17 and 4 dBm, respectively. Copyright © 2016 John Wiley & Sons, Ltd.

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A Monolithic CMOS 2368<tex>$pm$</tex>30 MHz Transformer Based<tex>$Q$</tex>-Enhanced Series-C Coupled Resonator Bandpass Filter

Cited by 48 publications

References 18 publications

Active N-path Filters: Theory and Design

Active N-path Filters: Theory and Design

Overview of Front‐End RF Passive Integration into SoCs

Harmonic fold back reduction at the N‐path filters

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