A Monolithic GaN-IC With Integrated Control Loop for 400-V Offline Buck Operation Achieving 95.6% Peak Efficiency

Kaufmann, Maik Peter; Wicht, Bernhard

doi:10.1109/jssc.2020.3018404

Cited by 37 publications

(16 citation statements)

References 29 publications

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“…An additional stage is needed to adapt the output levels of the differential amplifiers [17,20,23,53], for example with source follower (SF). In [34] a comparator is realized with three stages consisting of a differential amplifier with cross-coupled latch and two logic inverters. The amplifier from [23] is realized in the same technology but with different process parameters.…”

Section: B Analog Circuitsmentioning

confidence: 99%

“…The active load can be further increased by a longer and narrower channel. The highest gain solution seems to be a three stage approach with cross-coupled latch [34], but no information on voltage gain etc. could be found.…”

Section: B Analog Circuitsmentioning

confidence: 99%

“…Many other publications followed based on this driver concept [3,6,28,30,[69][70][71][72][73][74]. Gate drivers based on boot-strapping techniques have also already been realized [34,75,76]. Commercial ICs with power HEMT and gate driver with voltage regulator as well as dV/dt-control called AllGaN are fabricated by Navitas Semiconductor [77].…”

Section: ) Level 1: Power Stage With Integrated Driver(s)mentioning

confidence: 99%

“…A closed-loop control in GaN with sensing and control is very complex and still faces some challenges. First works show the realization with power device(s), driver, sensing, control [33] in combination with protection [6] as well as power supply [34] and demonstrate the potential of an all-in-GaN solution.…”

Section: ) Level 4: Controlmentioning

confidence: 99%

“…Combined or cascaded circuits such as gate drivers [25][26][27][28][29][30], and protection functions [31,32] can be implemented using digital and analog circuits. The development of these buildings or function blocks allows the realization of more complex circuits consisting of power device(s), driver, control [33] in combination with protection [6] as well as power supply [34]. Furthermore, GaN power ICs consisting of power device(s) and driver(s) are already commercially available from companies such as EPC or Navitas Semiconductor and many more are in the development phase of such ICs [35].…”

Section: Introductionmentioning

confidence: 99%

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Building Blocks for GaN Power Integration

Basler¹,

Reiner

Moench

et al. 2021

IEEE Access

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GaN technology is on the advance for the use in power ICs thanks to space-saving integrated circuit components and the increasing number of integrated devices. This work experimentally investigates a number of key building blocks for GaN power integration. First, an overview of the active and passives devices of the technology is given with focus on area-efficient layouts for power transistors and limitations of on-chip capacitors and inductors with comparison to other IC technologies. Digital and analog basic circuits as part of device libraries are examined and optimized with regard to area-efficiency. The NOT gates have active areas as low as 56.7 µm 2 and max. static currents of 0.12 mA with high noise margins. Further digital gates are presented. For the analog circuits, differential amplifiers and voltage reference concepts are presented and compared. Finally, GaN power integration is discussed, and integration levels are defined and described. The GaN technology is compared with other IC technologies, and future challenges and perspectives are shown. GaN power integration based on building blocks aims to exploit the full potential of the lateral GaN technology in order to compete with Si-based IC technologies in the future.INDEX TERMS Gallium nitride, integrated circuit technology, power integrated circuits, logic circuits, analog circuits

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