A monolithic low phase noise power oscillator using 0.35 um GaN/Al<sub>0.27</sub>Ga<sub>0.73</sub>N MMIC process

Gu, Liming; Che, Wenquan; Yang, Yang; Huang, Feifei; Chiu, Hsien‐Chin

doi:10.1080/21681724.2015.1036794

Cited by 4 publications

(1 citation statement)

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“…For high power microwave applications, GaN has been significantly studied on designing high-power and high-efficiency devices [12]. However, due to the limitation of complicated design techniques, complex fabrication process and implementation circumstance, the reported high power PAs are normally limited to an output power under 1kW with low efficiency [13]- [15]. In this paper, we presents a novel P-band AlGaN/GaN amplifier based on push-pull architecture, which exhibits high linear gain of 19 dB, high saturated output power of 805 W and power added efficiency (PAE) up to 74.5% at the frequency band from 400 MHz to 500 MHz.…”

Section: Introductionmentioning

confidence: 99%

A 700W push-pull AlGaN/GaN power amplifier for P-band aerospace application

Tang

Wang

et al. 2016

2016 International Conference on Electromagnetics in Advanced Applications (ICEAA)

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This paper proposed a novel internally prematching network for high power and high efficiency power amplifier design. Based on this matching network, a pushpull GaN power amplifier with the high saturated output power of 805 W and peak PAE of 74.5% is realized. The proposed power amplifier can provide a relatively stable output power above 58.5 dBm (707 W) in the band of 400 MHz to 500 MHz while maintain a stable gain above 17.5 dB.

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Section: Introductionmentioning

confidence: 99%