A Monolithic Voltage-Boosting Parallel-Primary Transformer Structures for Fully Integrated CMOS Power Amplifier Design

An, Kyungwon; Kim, Younsuk; Lee, O.; Yang, Kuan; Kim, Hyungwook; Woo, Wangmyong; Chang, Jae Joon; Lee, Chang-Ho; Kim, Haksun; Laskar, J.

doi:10.1109/rfic.2007.380914

Cited by 27 publications

(13 citation statements)

References 5 publications

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“…However, the number of turns with this approach becomes larger on the secondary side, increasing the area and lowering the self-resonance frequency. Other examples can be found in [122], [123].…”

Section: Power Combination Using On-chip Transformersmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature. To reach watt-level output power from a single-chip CMOS PA, two main strategies can be identified: use of high supply voltage, and use of matching and power combination. High supply voltage limits are closely related to device design in the fabrication process. However, the maximum operating voltage can be improved by amplifier class selection, circuit solutions, and process modifications or mask changes. High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers. Reliability often sets the limits for the PA design, and PA degradation mechanisms are reviewed. A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.

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Section: Power Combination Using On-chip Transformersmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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“…Series/parallel transformer approaches have been described [44][45][46] where the output is the sum of the output voltages from N parallel power amplifiers as shown in Fig. 6(b).…”

Section: -25mentioning

confidence: 99%

Linearity and efficiency enhancement strategies for 4G wireless power amplifier designs

Larson

Kimball

Asbeck

2008

2008 IEEE Custom Integrated Circuits Conference

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Next generation wireless transmitters will rely on highly integrated silicon-based solutions to realize the cost and performance goals of the 4G market. This will require increased use of digital compensation techniques and innovative circuit approaches to maximize power and efficiency and minimize linearity degradation. This paper summarizes the circuit and system strategies being developed to meet these aggressive performance goals.

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“…Transformer-type combiner can be categorized as series-combining transformers (SCTs) and parallel-combining transformers (PCTs) [2]. Distributed active transformer (DAT) and monolithic voltage-boosting parallelprimary transformer are good examples of series-combining and parallel-combining, respectively [2,4]. Using slab inductors in power combiner was a successful effort in fully integrated wattlevel power amplifiers [3].…”

Section: Introductionmentioning

confidence: 99%

“…The optimization efforts have been taken on DAT structure to reduce cross coupling between input and output nodes as well as instability for amplifier block in [5]. This structure is relatively bulky in compare to active device area and proper for low inductance applications, although putting active devices inside circular structure was another effort to minimize chip area [4,6]. Multiple separate transformers composed of single-turn inductors as power combiner is proposed in [1].…”

Section: Introductionmentioning

confidence: 99%

“…Laying out planar inductor by using multi-layers for conductor segment connections (underpass connection) degrades the quality factor of the coils. This topology is suitable in processes that provide multiple thick metal layers [4]. This paper proposed a new power combiner for wattlevel PAs while it efforts to optimize and minimize the occupied area by power combiner in the used technology.…”

Section: Introductionmentioning

confidence: 99%

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