A monolithically integrated optical differential amplifier for applications in smart pixel arrays

Leipold, Dirk; Kehrli, U.; Thelen, K.; Gulden, K.H.; Epler, J. E.; Schweizer, H.; Pàtterson, B. D.; Seitz, Peter

doi:10.1109/68.393196

Cited by 4 publications

(2 citation statements)

References 8 publications

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“…On the other hand, for GaAsbased PDs, the comparative study between passivation types has been hardly presented for the qualitative and quantitative characteristics of the reverse dark current owing to its limitation of demands and usefulness. However, its performance has become more important in recent years because PD/LED or PD/VCSEL monolithic devices based on GaAs have attracted great interest because of the various optical communicative applications, for example free-space optical interconnect, smart pixel and bio-medical analysis system [16][17][18][19][20][21][22][23][24]. Especially, as these monolithic devices become a one-dimensional or two-dimensional array and their pixel numbers are increased, the research for the surface passivation/leakage current becomes more important because the etched surface is exposed with a larger area and further acts as a dominant noise source.…”

Section: Introductionmentioning

confidence: 99%

Comparative analysis of dark current between SiN_xand polyimide surface passivation of an avalanche photodiode based on GaAs

Song¹,

Roh²,

Lee³

et al. 2009

Semicond. Sci. Technol.

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In this paper, we present the effects of different surface passivation types, one with SiN x and the other with polyimide (PI), on the dark (leakage) current of a GaAs-based avalanche photodiode. We identified that the reverse dark current originates from the surface, and not from the bulk, showing the nearly linear dependence on perimeters of active-mesa (A-M) up to 90% of breakdown voltage (V br ). From the theoretical results, total dark current consists of generation-recombination (G-R), shunt and tunneling components from a surface and the avalanche gain component from a bulk for both passivation types. Although the bulk component of avalanche gain•bulk current generates the breakdown process, it appears only near V br (12.7 V) because of a very small bulk current of a few fA in theory. For a surface current, SiN x passivation has values two to eight times lower than PI passivation. The different behaviors of surface current between passivation types could be theoretically explained by quantitative description of the current components.

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Section: Introductionmentioning

confidence: 99%

Comparative analysis of dark current between SiN_xand polyimide surface passivation of an avalanche photodiode based on GaAs

Song¹,

Roh²,

Lee³

et al. 2009

Semicond. Sci. Technol.

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show abstract

“…In particular, their comparative study of dark current due to passivation is not sufficient with respect to quantitative and qualitative properties. However, it has become more important in recent years because PDs/LEDs or PDs/VCSELs monolithic devices based on GaAs have attracted great interest due to their various optical communicative applications, for instance, free space optical interconnect, smart pixel and biomedical diagnostic (analysis) system [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Analysis of surface dark current dependent upon surface passivation in APD based on GaAs

Song¹,

Roh²,

Lee³

et al. 2009

Semicond. Sci. Technol.

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In this paper, we investigated the dependence of reverse dark current on two types of surface passivation, one of which is polyimide and the other is SiN x , for InAs quantum dots/GaAs separate absorption, charge, multiplication avalanche photodiode (SACM APD). From the experimental results, we found that dark current was dominated by surface current, and not bulk current. It was also noted that SiN x passivation has a surface current that is lower by three to nine times in magnitude than that in polyimide passivation in the whole range of bias. To analyze the difference in dark current due to the passivation types, we propose the theoretical current components. This shows that the dark current of both passivation types is mainly composed of generation-recombination (G-R) and tunneling components, originating from the surface. However, each component has a different magnitude for passivation types, which can be explained by carrier concentration and trap density. The dependence of dark current on temperature shows the different behaviors between passivation types and supports a theoretical description of current components.

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Monolithically integrated optical differential amplifiers for applications in smart pixel arrays

Kehrli

Leipold

Thelen

et al. 1996

IEEE J. Quantum Electron.

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A monolithically integrated optical differential amplifier for applications in smart pixel arrays

Cited by 4 publications

References 8 publications

Comparative analysis of dark current between SiN_xand polyimide surface passivation of an avalanche photodiode based on GaAs

Comparative analysis of dark current between SiN_xand polyimide surface passivation of an avalanche photodiode based on GaAs

Analysis of surface dark current dependent upon surface passivation in APD based on GaAs

Monolithically integrated optical differential amplifiers for applications in smart pixel arrays

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A monolithically integrated optical differential amplifier for applications in smart pixel arrays

Cited by 4 publications

References 8 publications

Comparative analysis of dark current between SiNxand polyimide surface passivation of an avalanche photodiode based on GaAs

Comparative analysis of dark current between SiNxand polyimide surface passivation of an avalanche photodiode based on GaAs

Analysis of surface dark current dependent upon surface passivation in APD based on GaAs

Monolithically integrated optical differential amplifiers for applications in smart pixel arrays

Contact Info

Product

Resources

About

Comparative analysis of dark current between SiN_xand polyimide surface passivation of an avalanche photodiode based on GaAs

Comparative analysis of dark current between SiN_xand polyimide surface passivation of an avalanche photodiode based on GaAs