A more accurate calculation method of trap state distribution based on transient photo-voltage measurement

Lin, Zedong

doi:10.1016/j.chemphys.2020.111070

Cited by 6 publications

(6 citation statements)

References 34 publications

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“…According to the recombination theory, V oc is determined by the carrier recombination (bulk recombination and interface recombination) rate. [5][6][7][8][9][10][11] Figure 3a shows the simulation result of bulk recombination rate at the open-circuit state for reverse sweep versus scan rate. In the majority part of the device, as the scan rate increases, the bulk recombination rate first increases, reaches a peak at the scan rate around 4 Â 10 À3 Vs À1 , and then decreases.…”

Section: Difficulty Of Recombination Theory In Explaining V Oc Of Pscsmentioning

confidence: 99%

“…Many studies show that V oc is determined by the carrier recombination (bulk recombination and interface recombination). [5][6][7][8][9][10][11] Koster et al presented a formula to relate V oc to the bulk recombination rate. [5] Considering the interface recombination, Sandberg et al gave a general formula to describe the relation between recombination (bulk recombination and interface recombination) rate and V oc .…”

Section: Introductionmentioning

confidence: 99%

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Effect of Ion Vacancy Migration on Open‐Circuit Voltage of Perovskite Solar Cells

Lin

2021

Physica Status Solidi (a)

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Herein, the influence of ion vacancy migration on the open‐circuit voltage (Voc) of perovskite solar cells (PSCs) by computer simulation is explored. It is found that for PSCs, Voc is determined not only by the carrier recombination process, but also dominantly by the space charge effect of the ion vacancy stored within the Debye layers of the perovskite absorber layer. The migration of ion vacancy affects the ionic charge accumulation within the Debye layers, which affects the screen voltage via the space charge effect and thus determines Vocr and Vocf (open‐circuit voltage for reverse sweep and forward sweep, respectively). By tuning the parameters that determine ion vacancy mobility, the effects of ion vacancy mobility on Vocr and Vocf is investigated.

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Section: Difficulty Of Recombination Theory In Explaining V Oc Of Pscsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Ion Vacancy Migration on Open‐Circuit Voltage of Perovskite Solar Cells

Lin

2021

Physica Status Solidi (a)

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“…The TPV experimental measurement shows the non-linear result [24][25][26][27] . To solve this difficulty, Lin gave up the exponential distribution model and introduced the Gauss distribution model to replace it 31 . The prediction made by his theory shows that the TPV result satisfies quadratic function relation, which is in line with the TPV measurement 31 .…”

Section: Introductionmentioning

confidence: 99%

“…To solve this difficulty, Lin gave up the exponential distribution model and introduced the Gauss distribution model to replace it 31 . The prediction made by his theory shows that the TPV result satisfies quadratic function relation, which is in line with the TPV measurement 31 . Inspired by the theory given by Lin, in this paper, we introduce a general distribution function to extend his method.…”

Section: Introductionmentioning

confidence: 99%

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Extension of In-Gap Electronic-State Spectrum Extraction Technique Based on Transient Photo-Voltage Measurement

Lin¹

2021

Preprint

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This article puts forward a novel insight for extraction of trap state density (DOST) based on the transient photo-voltage (TPV) experimental data. Inspired by the method based on the Gauss distribution model, we introduce a universal general distribution model and present a general technique of DOST distribution from the experimental data of TPV measurement. The method based on the exponential (Gauss) distribution model is the one (two) order special case of our method. Compared to the method based on the exponential model (applicable only when the TPV result satisfies linear relation) and Gauss model (applicable only when the TPV result satisfies quadratic function relation), our work is effective for arbitrary TPV result.

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Influence of Ion Vacancy Migration on Short‐Circuit Current of Perovskite Solar Cells

Lin

2022

Physica Status Solidi (a)

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For perovskite solar cells (PSCs), the effect of ion vacancy motion on the short‐circuit current (Jsc) in the reverse and forward J–V scans is investigated. To reveal its mechanism, all the components of current (carrier current, ionic current, displacement current) at the short‐circuit working point are calculated and the action of mobile ion vacancy on them is explored. By adjusting the parameters determining the ion vacancy mobility μI, the effect of parameter μI on Jsc is discussed. The finding provides a great supplement for the theory of short‐circuit current.

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A more accurate calculation method of trap state distribution based on transient photo-voltage measurement

Cited by 6 publications

References 34 publications

Effect of Ion Vacancy Migration on Open‐Circuit Voltage of Perovskite Solar Cells

Effect of Ion Vacancy Migration on Open‐Circuit Voltage of Perovskite Solar Cells

Extension of In-Gap Electronic-State Spectrum Extraction Technique Based on Transient Photo-Voltage Measurement

Influence of Ion Vacancy Migration on Short‐Circuit Current of Perovskite Solar Cells

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