A MOSFET-based high voltage nanosecond pulse module for the gating of proximity-focused microchannel plate image-intensifier

Fang, Yuman; Gou, Yongsheng; Min-rui, Zhang; Wang, Junfeng; Tian, Jinshou

doi:10.1016/j.nima.2020.164799

Cited by 7 publications

(2 citation statements)

References 15 publications

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“…The gating circuit (figure 1(a)) consisted of a fast MOSFET transistor T1 (ARF463AP1G) with a driver IC1 (NCP81074B) to provide gate pulses replicating trigger pulses from the digital delay generator (Highland technology P400 digital delay and pulse generator), which was triggered by pulsed laser synchronization pulses. We modified the circuit design taken from [17,18]. Intensifier was on when the −200 V pulses were provided to its photocathode, the other time, it was off by a constant 50 V voltage applied through resistor R9.…”

Section: Jinst 18 P05026 2 Experimental Setupmentioning

confidence: 99%

Cost-efficient single photon-sensitive nanosecond gated spectrometer based on commercial grade image intensifier

Ščajev

Mekys

2023

J. Inst.

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A commercial grade low-cost image intensifier was modified with a fast transistor gating circuit for time-resolved photoluminescence spectra and decay measurements. Gating exposure of 20 ns and spectral sensitivity in the 300–1000 nm range were achieved. Operation frequency in 5 Hz to 0.3 MHz range was verified by a pulsed laser diode. Pulsed repetitive image detection was integrated on a cooled CMOS camera. High dynamic range and wide spectral resolution were achieved. The thermal noise, reduced by three orders of magnitude at -16°C cooling and a high gain of 104, allowed single photon detection. Application of the spectrometer for sensitive photoluminescence decay measurements at pulsed laser excitation was performed on MAPbBr3 perovskite and CsI(Tl) scintillator crystals. The decay lifetimes of 400–600 ns and 100–6000 ns were determined, respectively. CsI(Tl) scintillator showed much stronger x-ray luminescence intensity due to larger defect density.

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Section: Jinst 18 P05026 2 Experimental Setupmentioning

confidence: 99%

Cost-efficient single photon-sensitive nanosecond gated spectrometer based on commercial grade image intensifier

Ščajev

Mekys

2023

J. Inst.

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“…To obtain time-resolved images, the proximity focus image intensifier is usually gated between the photocathode and the input surface of MCP with a high voltage ultrafast electrical pulse. In this gating method, the gating pulse amplitude of about -200 V is required [8].…”

Section: Introductionmentioning

confidence: 99%

Ultrafast High Voltage Pulse Generator Based on Power MOSFETs Delay Push-pull Structure

Chen

Wang

Luo

et al. 2023

J. Phys.: Conf. Ser.

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In this paper, an ultrafast high voltage pulse generator based on power MOSFETs delay push-pull structure is designed. The two complementary power MOSFETs are connected in the push-pull circuit and driven by the low-power MOSFETs separately. The output ultrafast high-voltage pulse amplitude is +30 V ~ -200 V, and the front edge and back edge times of the pulse are 5 ns and 4 ns, respectively. The width and frequency of the output pulse are controlled by the external trigger input signal. The shortest output pulse width is 12 ns and the maximum operating frequency is 100 kHz while the load is 10 pF. The delay conduction method of power MOSFETs is helpful to reduce power dissipation and improve the reliability of the circuit at a high operating frequency.

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Ultrafast optical gated image intensifier with a temporal resolution of 230 picosecond using uniform underlayer

Yang

Gou

Feng

et al. 2023

Nuclear Instruments and Methods in Physics Research Section A:

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A MOSFET-based high voltage nanosecond pulse module for the gating of proximity-focused microchannel plate image-intensifier

Cited by 7 publications

References 15 publications

Cost-efficient single photon-sensitive nanosecond gated spectrometer based on commercial grade image intensifier

Cost-efficient single photon-sensitive nanosecond gated spectrometer based on commercial grade image intensifier

Ultrafast High Voltage Pulse Generator Based on Power MOSFETs Delay Push-pull Structure

Ultrafast optical gated image intensifier with a temporal resolution of 230 picosecond using uniform underlayer

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