2015
DOI: 10.1080/09500340.2015.1024771
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A multi-band, multi-level, multi-electron model for efficient FDTD simulations of electromagnetic interactions with semiconductor quantum wells

Abstract: We report a new computational model for simulations of electromagnetic interactions with semiconductor quantum well(s) (SQW) in complex electromagnetic geometries using the finite difference time domain (FDTD) method. The presented model is based on an approach of spanning a large number of electron transverse momentum states in each SQW sub-band (multiband) with a small number of discrete multi-electron states (multi-level, multi-

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Cited by 3 publications
(1 citation statement)
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“…Importantly, SBE can be coupled to full-vector Maxwell equations through the nonlinear currents and polarizations in a straightforward way. 14,[45][46][47] Feasibility and robustness of a coupled Maxwell-semiconductor Bloch approach for investigating the highorder harmonic spectra for a finite slab and 3D sub-wavelength nanoparticle geometries in the non-perturbative regime of ultrashort laser pulse excitation has been recently demonstrated in Refs. 14,48 Driven either by a Fabry-Perot-like standing wave resonator or by magnetic dipole Mie resonances, inhomogeneously photo-induced carriers are localized in the semiconductor material (GaAs), producing enhanced even and odd harmonics for the resonant geometry and excitation conditions.…”
Section: Non-perturbative Microscopic Modelsmentioning
confidence: 99%
“…Importantly, SBE can be coupled to full-vector Maxwell equations through the nonlinear currents and polarizations in a straightforward way. 14,[45][46][47] Feasibility and robustness of a coupled Maxwell-semiconductor Bloch approach for investigating the highorder harmonic spectra for a finite slab and 3D sub-wavelength nanoparticle geometries in the non-perturbative regime of ultrashort laser pulse excitation has been recently demonstrated in Refs. 14,48 Driven either by a Fabry-Perot-like standing wave resonator or by magnetic dipole Mie resonances, inhomogeneously photo-induced carriers are localized in the semiconductor material (GaAs), producing enhanced even and odd harmonics for the resonant geometry and excitation conditions.…”
Section: Non-perturbative Microscopic Modelsmentioning
confidence: 99%