A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

Jdidi, A.; Sfina, N.; Nassrallah, S Abdi-Ben; Saïd, M. Ben; Lazzari, J.–L.

doi:10.1088/0268-1242/26/12/125019

Cited by 12 publications

(6 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Those devices that attempt to operate at higher frequencies typically incorporate various nitride materials. There are also similar issues when the absorbed wavelength gets very long, into the VLWIR range [10,80]. …”

Section: Quantum Well Infrared Photodetectorsmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

230

110

View full text Add to dashboard Cite

The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

show abstract

Section: Quantum Well Infrared Photodetectorsmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

230

110

View full text Add to dashboard Cite

show abstract

“…For this reason, J GR (the generation-recombination current density) comes only from the depletion region of the absorber and is calculated using the equation, according to the procedure outlined Ref. [26] …”

Section: P-i-n Modeling and Current Simulationmentioning

confidence: 99%

Direct band gap In Ga1−As/Ge type II strained quantum wells for short-wave infrared p–i–n photodetector

et al. 2015

View full text Add to dashboard Cite

a b s t r a c tWe theoretically investigate GaAs/Ge/InGaAs as a quantum wells for the design of short-wave infrared p-i-n photodetectors in which the quantum well Ge/InGaAs is the active region. At room temperature, strained Ge/In x Ga 1Àx As becomes a direct band gap when In composition x is lower than 2.5% and 5% respectively. We have calculated the electronic band parameters for the heterointerface Ge/In x Ga 1Àx As. Then, a type-II strain GaAs/Ge/In 0.35 Ga 0.65 As/GaAs quantum wells heterostructure optimized in terms of compositions and thicknesses is studied by solving Schrödinger equation as well as the absorption coefficient (>1.5 Â 10 4 cm À1 ). These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature in the range 1.3-1.55 lm. The electron transport in the GaAs/Ge/In 0.35 Ga 0.65 As/GaAs multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. The temperature dependence of dark current mechanisms and zero-bias resistance area product (R 0 A) have been analyzed. Extracted from current-voltage characteristics, R 0 A products above 3.6 Á 10 6 X cm 2 at 77 K were calculated, and the quantitative analysis of the J-V curves showed that the dark current density of Ge/In 0.35 Ga 0.65 As photodetector is dominated by generation-recombination processes. The suitability of the modeled photodetector is approved by its feasibility of achieving good device performance near room temperature operating at 1.55 lm. Quantum efficiency of $90% and responsivity $0.6 A/W, have been achieved.

show abstract

“…Infrared (IR) detectors and imaging sensors (wavelength of 1–14 µm) have been widely utilized as optoelectronic devices in various fields, including applications for night‐vision, telecommunication, astronomy, security, pharmaceuticals, military industry, and environmental monitoring. [ 1–10 ] IR detectors based on 2D layered materials such as graphene and transition metal dichalcogenides have attracted significant attention owing to their atomically thin body, absence of dangling bonds, and their broad range of absorption wavelengths. [ 11–18 ] However, monolayer 2D materials suffer from low efficiency of absorption of incident photons and a short lifetime of photoexcited carriers, which restrict their use in 2D materials‐based photodetector applications.…”

Section: Introductionmentioning

confidence: 99%

Infrared Proximity Sensors Based on Photo‐Induced Tunneling in van der Waals Integration

Kim

Phan

Cho

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

Infrared (IR) detectors based on photo‐induced tunneling in van der Waals heterostructures (vdWHs) of graphene/h‐BN/graphene or MoS2/h‐BN/graphene exhibit extremely low dark currents owing to a large electron barrier. However, a lack of tunneling barrier materials except for h‐BN for 2D vdWHs limits their further enhancement. In this study, a broadband detection is reported with high sensitivity and fast photoresponse of IR proximity sensor by a vdW integration (2D‐3D) of graphene or MoS2, with NiO/Ni as the IR absorber and hole selective transport layer/counter electrode. The low Schottky barrier height of the reported junctions suppresses dark current with a high detectivity ≈1014 Jones and generates a photocurrent by transporting photo‐excited carriers through a low hole barrier at a wide wavelength. Two types of integrated IR proximity sensor applications are developed: a passive sensor (MoS2/NiO/Ni) for the near‐IR (NIR) range and an active sensor (Gr/NiO/Ni) for the mid‐IR (MIR) range. The former shows a broadband photoresponse to reflect the NIR, while the latter absorbs human body irradiation (2–16 µm wavelength) with a fast photoresponse of 3.5 s (rise time) and 1.8 s (fall time). The fabricated sensors utilize low power, broadband detection, high sensitivity, fast photoresponse, and large‐scale area at room temperature.

show abstract

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

Cited by 12 publications

References 51 publications

Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

Direct band gap In Ga1−As/Ge type II strained quantum wells for short-wave infrared p–i–n photodetector

Infrared Proximity Sensors Based on Photo‐Induced Tunneling in van der Waals Integration

Contact Info

Product

Resources

About