A Multi‐Directional GaN/TiO2 Cuboidal Nanowire Junctionless FET‐Based Ultra‐High Pressure Sensor: A Design Perspective
Amir Khodabakhsh,
Amir Amini,
Mohammad Fallahnejad
Abstract:In this work, a nanoelectromechanical system (NEMS) field‐effect transistor (FET)‐based ultra‐high pressure (PR) multi‐directional sensor utilizing a junctionless profile and gate‐all‐around geometry is proposed with the advanced materials GaN/TiO2, named MD‐JLFET PR sensor. A design guide approach is considered, and accurate analysis is conducted starting from the bending of cantilevers based on materials' Young's moduli due to applied pressure and finally extracting the dynamic range of the proposed PR senso… Show more
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