A multi-technique characterization of electroless gold contacts on single crystal CdZnTe radiation detectors

Bell, S.; Baker, Mark; Chen, H; Marthandam, Pramodha; Veeramani, P.; Schneider, Andreas; Seller, P.; Sellin, P.J.; Veale, Matthew C.; Wilson, Matthew D.

doi:10.1088/0022-3727/46/45/455502

Cited by 22 publications

(18 citation statements)

References 38 publications

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“…. This would be equivalent to 3.2 to 34.4 pA per pixel for a 250 μm pitch pixellated detector, well within the required specification for the HEXITEC ASIC tolerance of 50 pA per channel and comparable with the performance of detectors fabricated directly by Redlen Technologies [41]. The back-to-back blocking I-V response of all five detectors was characteristic of a metal-semiconductor-metal system with two Schottky barriers.…”

Section: Effects Of Gold Chloride Solution Temperaturementioning

confidence: 54%

“…The precipitation of CdCl 2 within the interface occurs during electroless deposition as the concentration of Cd 2+ and Cl − reach supersaturation levels within the solution. Chloride species have previously been observed in the interface following electroless deposition [50][51][52][53] and PCA analysis of XPS measurements [41] have confirmed that the depth distribution of metal chloride correlates with that of a compound of cadmium other than CdZnTe.…”

Section: Role Of Subsurface Voidsmentioning

confidence: 58%

“…A previous study by Bell et al [41] has been used to help identify the features of the FIB images. The current FIB images show subsurface voids in the CdZnTe crystal below the contact.…”

Section: Role Of Subsurface Voidsmentioning

confidence: 99%

“…Based on PCA analysis of XPS data these were attributed to the presence of Au/AuTe particulates [41]. It is proposed that the bright grains, observed in the deep subsurface features within the TEM/FIB cross section images of figures 9 and 10, are gold particulates with an internal composition of elemental gold and a surface composition of gold telluride.…”

Section: Subsurface Damagementioning

confidence: 99%

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Characterization of the metal–semiconductor interface of gold contacts on CdZnTe formed by electroless deposition

Bell

Baker

Duarte

et al. 2015

J. Phys. D: Appl. Phys.

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Section: Effects Of Gold Chloride Solution Temperaturementioning

confidence: 54%

Section: Role Of Subsurface Voidsmentioning

confidence: 58%

“…A previous study by Bell et al [41] has been used to help identify the features of the FIB images. The current FIB images show subsurface voids in the CdZnTe crystal below the contact.…”

Section: Role Of Subsurface Voidsmentioning

confidence: 99%

Section: Subsurface Damagementioning

confidence: 99%

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Characterization of the metal–semiconductor interface of gold contacts on CdZnTe formed by electroless deposition

Bell

Baker

Duarte

et al. 2015

J. Phys. D: Appl. Phys.

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“…CdZnTe crystals prepared by an improved Bridgman method [10] were cut along the (111) In this study, surface morphology and sectional interface of electrode were observed by AFM (AP-1090) and SEM (KYKY-AMRAY 1000B), respectively. The barrier height of composite electrode contact was calculated from the I−V curve (tested by a KEITHLEY 4200).…”

Section: Methodsmentioning

confidence: 99%

Fabrication and characterization of Au/Zn composite electrode on p‐CdZnTe (111) B plane

Liang

Min

Yang

et al. 2016

Phys. Status Solidi C

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Electrode fabrication is a key procedure for preparation of high‐performance CdZnTe detectors, and the metal–semiconductor contact contributes greatly to the performance of detectors. In the present paper, a vacuum evaporation method was used to deposit a Au/Zn composite electrode on the (111) plane of p‐CdZnTe. Based on the AFM, SEM, current–voltage testing and the barrier‐height calculations, the effects of an Au/Zn contact on CdZnTe detector properties were investigated. The results showed that a lower Schottky barrier height was attained by depositing a Au layer on p‐CdZnTe(111) A plane and a Au/Zn double layers on (111) B plane, decreasing the influence of the Te‐enriched surface on the metal–semiconductor contact, and suggesting a better ohmic contact for CdZnTe detectors. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Electroless gold patterning of CdZnTe crystals for radiation detection by scanning pipette technique

Zambelli

Benassi

Gombia

et al. 2014

Crystal Research and Technology

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Recently some of the authors have proposed a new technique to deposit contacts on CdZnTe detectors that combines the standard electroless procedure and the scanning pipette technique. In this work it is shown that by using a 15 micron inner diameter alumina pipette it is possible to deposit gold dots, pixels and micro-stripes without using the standard photolithographic process. Moreover, it is shown that the performances in terms of charge collection efficiency and energy resolution of detectors prepared with the scanning pipette technique are similar to the ones of detectors prepared with the standard electroless procedure.

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A multi-technique characterization of electroless gold contacts on single crystal CdZnTe radiation detectors

Cited by 22 publications

References 38 publications

Characterization of the metal–semiconductor interface of gold contacts on CdZnTe formed by electroless deposition

Characterization of the metal–semiconductor interface of gold contacts on CdZnTe formed by electroless deposition

Fabrication and characterization of Au/Zn composite electrode on p‐CdZnTe (111) B plane

Electroless gold patterning of CdZnTe crystals for radiation detection by scanning pipette technique

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