A multichannel single-photon sensitive detector for high-energy physics: the megapixel EBCCD

Benussi, L.; Fanti, Viviana; Frekers, D.; Frenkel, A.; Giannini, G.; Golovkin, S.V.; Kozarenko, E.; Kreslo, I.; Liberti, B.; Martellotti, G.; Medvedkov, A.; Mondardini, M.R.; Penso, G.; Polizzi, Anthony; Santacesaria, R.; Santini, Guillaume; Spinetti, M.; Vilain, P.; Votano, L.; Wilquet, G.; Winter, K.

doi:10.1016/s0168-9002(99)01265-6

Cited by 14 publications

(6 citation statements)

References 5 publications

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“…These could be used in applications where both single-photon sensitivity and high temporal resolution are required, like simultaneous positron emission tomography and magnetic resonance imaging 33 34 , today's hot topic in medical diagnostic. Finally, an AMCP vertically integrated on charge-coupled arrays (CCDs) could provide a variant of electron-bombarded CCD 35 36 (ebCCD) to be used in single-molecule spectroscopy 10 37 or mass spectrometry 9 .…”

Section: Discussionmentioning

confidence: 99%

Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon

Franco

Geissbühler

Wyrsch

et al. 2014

Sci Rep

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Microchannel plates are vacuum-based electron multipliers for particle—in particular, photon— detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80–120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200°C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process.

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Section: Discussionmentioning

confidence: 99%

Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon

Franco

Geissbühler

Wyrsch

et al. 2014

Sci Rep

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show abstract

“…The first commercially available EBCCD was made by Hamamatsu in 2000, and offered 1024 × 2014 pixels, operating voltage of 6–8 kV and a 3 Hz maximum frame rate [ 36 ]. Other EBCCD developments have reported frame rates up to 200 Hz [ 37 ], and maximum acceleration voltages of 14 kV and 15 kV [ 18 , 38 , 39 ]. Intensified EBCCDs, comprising a MCP between the photocathode and the CCD, have also been developed [ 40 ].…”

Section: Eb-technologymentioning

confidence: 99%

Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

Hirvonen

Suhling

2016

Sensors

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Electron-bombarded pixel image sensors, where a single photoelectron is accelerated directly into a CCD or CMOS sensor, allow wide-field imaging at extremely low light levels as they are sensitive enough to detect single photons. This technology allows the detection of up to hundreds or thousands of photon events per frame, depending on the sensor size, and photon event centroiding can be employed to recover resolution lost in the detection process. Unlike photon events from electron-multiplying sensors, the photon events from electron-bombarded sensors have a narrow, acceleration-voltage-dependent pulse height distribution. Thus a gain voltage sweep during exposure in an electron-bombarded sensor could allow photon arrival time determination from the pulse height with sub-frame exposure time resolution. We give a brief overview of our work with electron-bombarded pixel image sensor technology and recent developments in this field for single photon counting imaging, and examples of some applications.

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“…Many devices such as EMCCD [1], SPAD [2] Electron bombardment CCD or CMOS [3][4][5] can achieve the limit of sensitivity. Among them, the EBCMOS are hybrid photon detections, which can detect high energy ionizing particles and are regarded as the next generation low light vision [5].…”

Section: Introductionmentioning

confidence: 99%

A study for the detection of ionizing particles with gate-controlled phototransistor on SOI substrate

Zhang¹,

Pan²,

Sun³

2017

AIP Conference Proceedings

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A multichannel single-photon sensitive detector for high-energy physics: the megapixel EBCCD

Cited by 14 publications

References 5 publications

Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon

Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon

Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

A study for the detection of ionizing particles with gate-controlled phototransistor on SOI substrate

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