2012
DOI: 10.1007/s11425-012-4406-y
|View full text |Cite
|
Sign up to set email alerts
|

A multilevel preconditioner for the C-R FEM for elliptic problems with discontinuous coefficients

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
3
0

Year Published

2012
2012
2017
2017

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 33 publications
0
3
0
Order By: Relevance
“…To this end, one needs to introduce a special projection of the flux solution to the element boundaries as the trace approximation. We refer to [12,6,13,1,29,36,28,40,48] for multigrid algorithms or preconditioning for the CR or CR-related nonconforming finite element methods. In particular, in [13], an optimal-order multigrid method was proposed and analyzed for the lowest-order Raviart-Thomas mixed element based on the equivalence between Raviart-Thomas mixed methods and certain nonconforming methods.…”
mentioning
confidence: 99%
“…To this end, one needs to introduce a special projection of the flux solution to the element boundaries as the trace approximation. We refer to [12,6,13,1,29,36,28,40,48] for multigrid algorithms or preconditioning for the CR or CR-related nonconforming finite element methods. In particular, in [13], an optimal-order multigrid method was proposed and analyzed for the lowest-order Raviart-Thomas mixed element based on the equivalence between Raviart-Thomas mixed methods and certain nonconforming methods.…”
mentioning
confidence: 99%
“…[1][2][3][4][5] However, the BTBT mechanism inevitably causes the on-state current of TFETs to be lower than that of MOSFETs by approximately two to four orders of magnitude, limiting the applications of TFETs. [6][7][8][9][10][11] In addition, contrary to the theoretical prediction, it has been shown experimentally that the SS values of many fabricated TFET devices are much higher than 60 mV/dec. [12][13][14] Therefore, new channel materials and innovative device structures, such as narrow band-gap materials, [15][16][17] green FETs, [18] multi-gate TFETs, [19][20][21] and line TFETs (LTFETs) [22] have been developed to overcome the shortcomings of the TFETs.…”
Section: Introductionmentioning
confidence: 70%
“…Because these nonconforming spaces are non‐nested, special intergrid transfer operators (restriction and prolongation) are needed in the analysis and implementation of the algorithms. Recently, the robustness of the BPX preconditioner using the non‐nested nonconforming coarse spaces was shown in for the jump coefficient problem .…”
Section: Introductionmentioning
confidence: 99%