A multiple-switch high-voltage DC-DC converter

Wesenbeeck, M.P.N. van; Klaasens, J.B.; Stockhausen, U. von; Anciola, A. Munoz de Morales; Valtchev, Stanimir

doi:10.1109/41.649939

Cited by 15 publications

(6 citation statements)

References 7 publications

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“…Gester classifies them [15], [11] and allocates them among two categories. On the one hand, load-side voltage-balancing methods consist in symmetrizing the impedance of each transistor [16], [17], [18], [19]. On the other hand, gateside voltage-balancing methods compensate dissymmetry by adapting the triggering signals of each gate [20], [21], [22], [15].…”

Section: V 16kvmentioning

confidence: 99%

Ultrahigh-Voltage Switch for Bidirectional DC–DC Converter Driving Dielectric Elastomer Actuator

Pniak

Almanza

Civet

et al. 2020

IEEE Trans. Power Electron.

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Specific applications, such as dielectric elastomer actuators (DEAs) or electroactive polymers, require to switch voltage levels exceeding the ratings of existing semiconductor devices. In low power application, reversible flyback are widely used to supply DEAs. Lowering the parallel parasitic capacitance of the high-voltage switch is important to improve the energy transfer, while it becomes mandatory to increase the output voltage of flyback above 2.5 kV. In this paper, a Pulsed Transformer Gate Driver (PTGD) is used to drive seriesconnected MOSFET and therefore push the limits from 4.5 kV up to 16 kV. At these high voltage levels, the structure reveals a drastic voltage unbalance related to the transformer interwinding parasitic capacitance. The compensation method proposed to achieve voltage balance only adds few passive components and reduces significantly the additional parallel capacitance of the switch compared to common load side voltage balancing methods. Finally and as proof of concept, a halfbridge bidirectional converter was designed from this switch technology and drove an actual dielectric elastomer actuator at 16 kV.

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Section: V 16kvmentioning

confidence: 99%

Ultrahigh-Voltage Switch for Bidirectional DC–DC Converter Driving Dielectric Elastomer Actuator

Pniak

Almanza

Civet

et al. 2020

IEEE Trans. Power Electron.

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“…A category described as load-side voltage balancing includes methods based on impedance-symmetrization [4], clamp circuits, active/lossless snubber circuits [5], [14], and passive snubber circuits [3]. The other category, described as gate side voltage balancing, includes and control [6], active overvoltage protection by dynamic clamp circuits [7], high precision gate drive timing [8], cascaded synchronization [9], and time-delay compensation [3].…”

Section: Connecting Power Mosfets In Seriesmentioning

confidence: 99%

“…Compactness of the power circuit can also suffer. Capacitive snubbers and resonant techniques applied to the load side can reduce the losses somewhat, but require more power components [5], [14]. Design techniques are the same as those employed to build a diverse range of snubbers [3].…”

Section: Connecting Power Mosfets In Seriesmentioning

confidence: 99%

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Transformerless capacitive coupling of gate signals for series operation of power MOS devices

Hess

Baker

2000

IEEE Trans. Power Electron.

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“…INTRODUCTION D ESPITE the continuous demand for reducing the supply voltage and the power consumption of integrated circuits [1, 2], there are some applications that still require high voltage operation, such as MEMS devices, EEPROM programmers [3-8], power switches [9], LCD and line drivers [10]. To meet the high voltage requirement, capacitive charge pumps are used in light load applications, while step-up DC-DC converters are used in heavy load applications [11][12][13][14][15][16][17]. Most of charge pump (CP) topologies in the literature [2,[18][19][20] are based on the Dickson charge pump [21], which is shown in Fig.…”

mentioning

confidence: 99%

All-pMOS 50-V Charge Pumps Using Low-Voltage Capacitors

Emira

Abdelghany

Elsayed

et al. 2013

IEEE Trans. Ind. Electron.

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Item Type ArticleAuthors Emira, Ahmed; AbdelGhany, M.; Elsayed, M.; Elshurafa, Amro M.; Sedky, S.; Salama, Khaled N.Abstract-In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0.6µm CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42.8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices. Index Terms-Charge pump, high voltage, MEMS interface, polarization voltage, DC-DC converters I. INTRODUCTION D ESPITE the continuous demand for reducing the supply voltage and the power consumption of integrated circuits [1, 2], there are some applications that still require high voltage operation, such as MEMS devices, EEPROM programmers [3-8], power switches [9], LCD and line drivers [10]. To meet the high voltage requirement, capacitive charge pumps are used in light load applications, while step-up DC-DC converters are used in heavy load applications [11][12][13][14][15][16][17]. Most of charge pump (CP) topologies in the literature [2,[18][19][20] are based on the Dickson charge pump [21], which is shown in Fig. 1, where the output voltage is given by:where N is the number of stages, V IN is the input voltage, and V ti and V to are the threshold voltages of the i th stage (where i = 1, 2, · · · , N ) and the output stage, respectively. This architecture suffers from the continuous increase in the threshold voltage from stage to stage due to the increase in the bulk-source voltage of M i transistor as i increases. Furthermore, the maximum attainable output voltage is limited by

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A multiple-switch high-voltage DC-DC converter

Cited by 15 publications

References 7 publications

Ultrahigh-Voltage Switch for Bidirectional DC–DC Converter Driving Dielectric Elastomer Actuator

Ultrahigh-Voltage Switch for Bidirectional DC–DC Converter Driving Dielectric Elastomer Actuator

Transformerless capacitive coupling of gate signals for series operation of power MOS devices

All-pMOS 50-V Charge Pumps Using Low-Voltage Capacitors

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