A nanorods AlN layer prepared by sputtering at oblique-angle and application as a buffer layer in a GaN-based light emitting diodes

Chen, Lung-Chien; Tien, Ching-Ho; Chien, Shih-Yi; Liao, Wei-Chain; Huang, Chao-Chong; Mu, Chien-Sheng; Chen, Cheng-Chiang; Hsu, Ya‐Ling

doi:10.1117/12.859657

Cited by 2 publications

(2 citation statements)

References 23 publications

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“…One of the possible explanations is that there was a strong shadowing effect for the Al flux, leading to the growth of the structures with an excess of nitrogen and slightly different parameters of the crystalline lattice. A similar effect was previously observed for AlN nanowires in [35]. Preferential growth of the nanostructures with the crystallographic orientation of individual pillars along the c-axis of the wurtzite-like crystalline structure, which was found using HRTEM, is well confirmed by the XRD spectra.…”

Section: Dependence On Deposition Anglesupporting

confidence: 84%

“…One of the possible explanations is that there was a strong shadowing effect for the Al flux, leading to the growth of the structures with an excess of nitrogen and slightly different parameters of the crystalline lattice. A similar effect was previously observed for AlN nanowires in [35]. The surface roughness of the continuous and nanostructured AlN films is obtained using AFM (Figure 6).…”

Section: Dependence On Deposition Anglesupporting

confidence: 81%

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Magnetron Sputter Deposition of Nanostructured AlN Thin Films

Chirumamilla,

Krekeler,

Wang

et al. 2023

Applied Nano

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Aluminum nitride (AlN) is a material of growing interest for power electronics, fabrication of sensors, micro-electromechanical systems, and piezoelectric generators. For the latter, the formation of nanowire arrays or nanostructured films is one of the emerging research directions. In the current work, nanostructured AlN films manufactured with normal and glancing angle magnetron sputter depositions have been investigated with scanning and transmission electron microscopy, X-ray diffraction, atomic force microscopy, and optical spectroscopy. Growth of the nanostructures was realized utilizing metal seed particles (Ag, Au, and Al), allowing the control of the nucleation and following growth of AlN. It was demonstrated how variations of seed particle material and size can be used to tune the parameters of nanostructures and morphology of the AlN films. Using normal angle deposition allowed the growth of bud-shaped structures, which consisted of pillars/lamellae with wurtzite-like crystalline structures. Deposition at a glancing angle of 85° led to a film of individual nanostructures located near each other and tilted at an angle of 33° relative to the surface normal. Such films maintained a high degree of wurtzite-like crystallinity but had a more open structure and higher roughness than the nanostructured films grown at normal incidence deposition. The developed production strategies and recipes for controlling parameters of nanostructured films pave the way for the formation of matrices to be used in piezoelectric applications.

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Section: Dependence On Deposition Anglesupporting

confidence: 84%

“…One of the possible explanations is that there was a strong shadowing effect for the Al flux, leading to the growth of the structures with an excess of nitrogen and slightly different parameters of the crystalline lattice. A similar effect was previously observed for AlN nanowires in [35]. The surface roughness of the continuous and nanostructured AlN films is obtained using AFM (Figure 6).…”

Section: Dependence On Deposition Anglesupporting

confidence: 81%

Magnetron Sputter Deposition of Nanostructured AlN Thin Films

Chirumamilla,

Krekeler,

Wang

et al. 2023

Applied Nano

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Stacking illumination of a confocal reflector light emitting diode automobile headlamp with an asymmetric triangular prism

Chen

Zhou

2017

Appl. Opt.

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A confocal reflector lamp with an asymmetric triangular prism was designed for a stacking illumination of a light emitting diode (LED) automobile headlamp fitting ECE R112 asymmetrical regulation. The optical system includes three 1st elliptic reflectors, three 2nd parabolic reflectors, and one asymmetric triangular prism. Three elliptic and parabolic reflectors were assembled with three confocal reflector modules; two modules projected the cut-off line of a 0° angle, and the other module projected the cut-off line of a 15° angle using of an asymmetric triangular prism. The ray tracing, optical simulation, and mockup experiment results exhibited that the illumination distribution met the regulation of ECE R112 class B, and the ideal efficiency could reach 96.8% in theory. The tolerance analysis showed the efficiency remained above 98% under the error values of ±0.2 mm of the position of the LED light source, and the y direction of the up-down movement was more sensitive than the x and z directions. The measurement results of the mockup sample safety factor were all larger than 1.15 and supported the regulation of the ECE R112 Class B.

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A nanorods AlN layer prepared by sputtering at oblique-angle and application as a buffer layer in a GaN-based light emitting diodes

Cited by 2 publications

References 23 publications

Magnetron Sputter Deposition of Nanostructured AlN Thin Films

Magnetron Sputter Deposition of Nanostructured AlN Thin Films

Stacking illumination of a confocal reflector light emitting diode automobile headlamp with an asymmetric triangular prism

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