A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

Abstract

Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide semiconductor (CMOS) technology. The proposed structure eliminates the requirements for wafer-thinning and the double-side metallization process by most commercial Si APD products. The fabricated device shows very low level dark current of several tens Picoamperes and ultra-high multiplication gain of ~4600 at near-infrared wavelength. The ultra-low extracted temperature coefficient of the breakdown voltage is 0.077 V/K. The high performance provides a promising solution for near-infrared weak light detection.

Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process

“…However, this study only involved the epitaxial growth of a single layer of intrinsic silicon; thus, subsequent multiple steps of ion implantation and TA were still required in the fabrication process. In 2022, Liu et al proposed a novel structure that eliminates the requirements for wafer-thinning and the double side metallization process compared with most commercial silicon APD products [ 16 ]. The structure was also based on intrinsic silicon and utilized a separated absorption charge (SACM) design.…”

Transition of photoresponsivity in graphene–insulator–silicon photodetectors

“…The demand for highly sensitive photodetectors is steadly increasing in various modern applications, including smartphones, telecommunications, suvallience, security, unmaned mobile systems, augmented reality, merged reality, quantum optics, quantum science and quantum technologies, etc. [1][2][3][4][5][6][7][8][9][10][11][12] In pursuit of this objective, extensive research has been conducted on silicon and graphene, leveraging their unique properties. [13][14][15][16][17][18][19] Graphene, with its symmetrical linear energy dispersion at low energies, high carrier mobility, strong carbon sp 2 hybridization-based bonding structure, mechanical flexibility, atomically thin profile, and high optical transmittance across the visible spectrum, is an ideal functional material and structure for optoelectronic devices spanning a broad spectral range.…”

“…Traditionally, avalanche photodiodes (APD) operating at high bias voltages are employed to fulfill these requirements. 7–10 However, the unique properties of MC-GIS photodiodes offer an alternative approach for achieving high sensitivity without the need for high bias voltages, opening up new possibilities for such applications. 22–25…”

Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers

“…Infrared photo-electronics is one of the most technologically advanced and rapidly developing areas of modern optoelectronics. Of particular interest are studies on the creation of highly sensitive and high-speed detectors for the fields of fiber communications [1][2][3][4][5][6][7], spectroscopy [8], and imaging systems [9,10]. Thus, avalanche photodetectors (APDs) have been very attractive with respect to high-sensitivity systems due to their intrinsic ability to enhance receiver sensitivity through internal avalanche gain [11].…”