A nearly ideal SiC Schottky barrier device edge termination

Abstract

A simple edge termination based on oxide ramp profile around the Schottky contact is used on Ni Schottky rectifier jabricated on a 2 . 7~1 0 '~ n-type 6H-Sic epilayer. Three anneals of the Schottky contacts were experimented. The diodes annealed at Y00"C showed excellent reverse characteristics with a nearly ideal breakdown at about 800V. theory with ideality factor nearly one.

Silicon Carbide Schottky Barrier Diode

“…Many works were reported on edge termination of SiC SBD to achieve high breakdown voltages [2,15,51,63,[95][96][97][98][99][100][103][104][105][106][107][108][109][110][111][112][113][114][115][116][117][118][119]]. 1 1 1990 1992 1994 1996 1998 2000 2002 2004 2006 Year Fig.…”

“…It also gives rise to a smooth metal step over the p-epi, avoiding field crowding at the comer. In [108], a field plating technique was proposed and demonstrated in [51] on a ramped oxide ( Fig. 12.d) to achieve a device breakdown voltage (800V) close to its ideal value.…”

Silicon Carbide Power MESFET

“…Prior research has proposed many techniques to improve the breakdown voltage [11][12][13][14][15]. The conventional termination techniques include of the Field Plate structure in the source or drain electrode [16], RESURF (Reduced Surface field) technology [17], floating metal rings [18][19], p-epi guard rings [20], etc [21][22][23]. In order to optimize the surface electric field and improve the breakdown voltage, the new technologies had been proposed, which includes of the REBULF (REduced BULk Field) [24] and complete 3D RESURF [15].…”