A negative electrocaloric effect in an antiferroelectric zirconium dioxide thin film

Allouche, B.; Hwang, Hyunsang; Yoo, Tae Jin

doi:10.1039/c9nr07293d

Cited by 24 publications

(11 citation statements)

References 35 publications

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“…[ 115 ] The ZrO 2 ‐based AFE thin films exhibit negative ECE. The maximum Δ T was calculated as high as −31 K at 413 K. [ 140 ] HZO based thin films exhibit both positive and negative ECE. HZO AFE thin films exhibit positive ECE.…”

Section: Energy‐related Applications Of Fluorite‐structural Materialsmentioning

confidence: 99%

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Ali

Lehninger

et al. 2022

Adv Funct Materials

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Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory-related and energy-related applications. Perovskite materials (e.g., bulk ceramics) remain the most common materials for many applications. However, due to large deposition thickness, these materials are not appropriate for future miniaturized devices. In 2011, FE and AFE properties were reported in Si-doped HfO 2 thin films. HfO 2 -based FE and AFE materials have several advantages over conventional materials, such as ultrathin deposition thickness (in range of nanometers), compatibility with existing Si semiconductor technology, and suitability for the integration within 3-D nanostructures. Therefore, fluorite-structured materials can be appropriate for miniaturized devices. These fluorite-structured materials are extensively studied for memory and energy-related applications. The first review on this topic was published after four years of discovering the FE and AFE properties in these materials. From the past decade, a lot of research has been reported about the detailed mechanism and application of these materials. This review insightfully discusses the progress in the research of fluorite-structured materials and critically discusses some potential applications. Here some challenges are also discussed, new knowledge is extracted, and promising future research directions of these materials are suggested.

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Section: Energy‐related Applications Of Fluorite‐structural Materialsmentioning

confidence: 99%

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Ali

Lehninger

et al. 2022

Adv Funct Materials

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“…Figure a,b shows the temperature‐dependent Δ T and the corresponding Δ S of ZrO 2 thin films. [ 47 ] The negative Δ S and Δ T values indicate that ZrO 2 thin films would warm up when removing and cool down when applying the electric field. Thin films of ZrO 2 achieved high Δ T values at all tested temperatures.…”

Section: Zro2‐and Hfo2‐based Materialsmentioning

confidence: 99%

“…Thin films of ZrO 2 achieved high Δ T values at all tested temperatures. They were equal to ≈−2 at 323 K but reached −31 at 413 K. [ 47 ] Similarly, HZO thin films exhibited a reasonably negative ECE with maximum Δ S and Δ T values of −10.9 J kg −1 K −1 and −10.7 K, respectively, at 448 K. [ 42 ]…”

Section: Zro2‐and Hfo2‐based Materialsmentioning

confidence: 99%

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Novel Fluorite‐Structured Materials for Solid‐State Refrigeration

Ali

Abbas

et al. 2022

Small

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Refrigeration based on the electrocaloric effect can offer many advantages over conventional cooling technologies in terms of efficiency, size, weight, and power source. The discovery of ferroelectric and antiferroelectric properties in fluorite‐based materials in 2011 has led to diverse applications related to memory (e.g., ferroelectric tunnel junctions, nonvolatile memory, and field‐effect transistors) and energy fields (e.g., energy storage and harvesting, electrocaloric refrigeration, and infrared detection). Fluorite‐based materials exhibit several properties not shared by most conventional materials (such as in terms of compatibility with complementary metal‐oxide semiconductors and 3D nanostructures, deposition thickness at the nanometer scale, and simple composition). Here, the electrocaloric refrigeration properties of fluorite‐based ferroelectric/antiferroelectric materials are reviewed by focusing on the advantages of ZrO2‐ and HfO2‐based materials (e.g., relative to conventional perovskite‐ and polymer‐based counterparts). Finally, the recent progress made in this research field are also discussed along with its future perspectives.

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“…Compared to the traditional vapor compression cooling technology, electrocaloric solid-state cooling has drawn much attention because of its high energy conversion efficiency, environmental-friendly process, low-cost, and small volume [3][4][5]. The ECE is characterized by Δ under external electric fields, where the positive ΔT is classified as the positive ECE [1,6] and the reverse belongs to the negative ECE [7,8]. The coexistence of positive and negative ECEs in one cooling cycle can effectively improve the coefficient of performance and benefit the application in ECE devices.…”

Section: Introductionmentioning

confidence: 99%

Adjustable giant negative electrocaloric effect in Pb1+xZrO3 thin films

Huang

Lin

et al. 2021

Preprint

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Electrocaloric effect (ECE) driven by electric field is suitable for implementation of built-in cooling in electronic devices. However, most of the known electrocaloric materials show low adiabatic temperature change ( ) near room temperature and usually require high electric field. Here, the investigation of ECE in Pb 1+x ZrO 3 (x=0, 0.1, 0.15) thin films, which were prepared on Pt/Ti/SiO 2 /Si substrates by sol-gel method, reveals that both the magnitude and the present temperature range of can be controlled by Pb concentration. Through increasing the dosage of PbO, decreased lead vacancies and enhanced interface layer are induced, which postpone the transition from antiferroelectrics to ferroelectrics of PbZrO 3 films under a given electric field ( E ), which thus controls the appearance temperature range of negative ECE. As a result, large isothermal entropy change ( and are observed in the temperature range from 260 K to 494 K, depending on the applied electric field and Pb concentration. Giant ECE ( , ~0.054) at room temperature (303 K) is obtained in Pb 1.1 ZrO 3 films under 460 kV/cm. This result provides a convenient method for modulating ECE of PbZrO 3 -based materials and will benefit its applications in cooling devices.

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A negative electrocaloric effect in an antiferroelectric zirconium dioxide thin film

Abstract: A large negative electrocaloric effect is demonstrated in an antiferroelectric ZrO2 thin film with 8 nm thickness deposited by atomic layer deposition.

Cited by 24 publications

References 35 publications

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Novel Fluorite‐Structured Materials for Solid‐State Refrigeration

Adjustable giant negative electrocaloric effect in Pb1+xZrO3 thin films

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