1997
DOI: 10.1246/cl.1997.265
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A Negative-Working Alkaline Developable Photoresist Based on Calix[4]resorcinarene, a Cross-linker, and a Photoacid Generator

Abstract: A negative working photoresist based on calix[4]resorcinarene, 4,4′-methylenebis[2,6-bis(hydroxymethyl)phenol] (MBHP) as a cross-linker, and a photoacid generator, diphenyliodonium 9,10-dimethoxyanthracene-2-sulfonate (DIAS), has been developed. A clear negative pattern was obtained when it was exposed to 365 nm UV light and postbaked at 130 °C, followed by developing with a 0.5% aqueous tetramethylammonium hydroxide solution at room temperature.

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Cited by 46 publications
(35 citation statements)
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“…8,9,22 Benzyl carbocations, which were formed from the crosslinker by acid catalysis, reacted with Noria-OEt to form the crosslinking products. At the same time, benzyl ethers also formed because of the self-condensation reaction of the crosslinker by heating and reaction with Noria-OEt.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…8,9,22 Benzyl carbocations, which were formed from the crosslinker by acid catalysis, reacted with Noria-OEt to form the crosslinking products. At the same time, benzyl ethers also formed because of the self-condensation reaction of the crosslinker by heating and reaction with Noria-OEt.…”
Section: Resultsmentioning
confidence: 99%
“…[5][6][7] Ueda et al also reported a multicomponent, alkaline developable, negative-type photoresist composed of calixresorcin [4]arene, with 4,4¢-methylenebis[2,6-bis(hydroxymethyl)phenol] as a crosslinker and diphenyliodonium 9,10-dimethoxyanthracene-2-sulfonate as a photoacid generator (PAG), and they achieved a 150-nm resolution pattern. 8,9 Thereafter, many negative-or positive-type molecular resist materials have been reported using various molecular glasses. [10][11][12][13][14] More than 10 years ago, C-4-hydoroxyphenylcalix [4]resorcinarene derivatives containing tert-butyl groups (CRA ph -COO t Bu) were investigated as positive-type alkaline developable molecular resists.…”
Section: Introductionmentioning
confidence: 99%
“…amplification ArF photo-resist materials have been reported using various polymers containing fluorine and alicyclic groups, such as adamantane and norbornane. 51,52 It was suggested that molecular size is an important consideration to achieve higher resolution, from the viewpoints of both photoreactivity and low line-edge roughness. 43 We designed new CD derivatives containing fluorine and tbutyl ester moieties as candidate high-performance ArF photoresist materials, 53 because we expected that CD derivatives would show good transmittance of vacuum ultraviolet (VUV) laser light.…”
Section: Arf Resist Materials Based On Cyclodex-trinmentioning
confidence: 99%
“…However, there is a serious problem among the resolution of pattern, sensitivity of the photo-chemical reaction, and roughness of the pattern, i.e., these relationships are well known as "trade-off". To overcome this "trade-off", many molecular glasses such as calixarenes, 1-10 dendritic oligomers, [11][12][13][14][15][16][17][18] low-molecular-weight oligomers, 19,20 and fullerenes 21 have been reported and their resolutions showed about 50 nm regions. Recently, we could design a ladder type cyclic oligomer "noria" (noria = water wheel in Latin), 22 and examined the synthesis, physical properties, and patterning properties of noria derivatives with pendant t-butyl ester groups, 23,24 t-butyloxycarbonyl groups, 25 adamantyl ester groups, 26,27 cyclohexyl acetal moiety, 28 and oxetanyl groups 29 using electron beam (EB) or EUV exposure systems.…”
Section: Introductionmentioning
confidence: 99%