A New 1200V SiC MPS Diode with Improved Performance and Ruggedness

Draghici, Mihai; Rupp, Roland; Gerlach, R.; Zippelius, Bernd

doi:10.4028/www.scientific.net/msf.821-823.608

Cited by 16 publications

(6 citation statements)

References 7 publications

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“…Fig. 1 c shows the main structure of SiC MPS diode which is a hybrid diode consisting of a Schottky contact for the anode, interleaved highly doped P+ regions, a lightly doped N− region and a highly doped N+ region for the cathode [25, 26]. For very small on‐state voltage drop, only Schottky contact areas are active and the Schottky part will firstly conduct current.…”

Section: Sic Mps Diode Structurementioning

confidence: 99%

Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model

Xiao

Luo

et al. 2020

IET power electron.

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Section: Sic Mps Diode Structurementioning

confidence: 99%

Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model

Xiao

Luo

et al. 2020

IET power electron.

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“…Surge current capability, which represents the ruggedness of power devices under high current pulses, is one of the key indices of the device reliability [ 8 , 9 , 10 , 11 , 12 ], for the reason that high current pulses are common at the starting-up of electrical equipment or during accidental circuit failures. Being commercially available since 2005 [ 8 , 13 ], SiC MPS diodes combine the advantages of a low forward voltage drop at nominal current and a high surge current capability. They gradually became the most promising type of SiC diodes in power applications [ 14 , 15 ].…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

Ren

Guo

et al. 2020

Materials

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A comparative study of surge current reliability of 1200 V/5 A 4H-SiC (silicon carbide) MPS (Merged PiN Schottky) diodes with different technologies is presented. The influences of device designs in terms of electrical and thermal aspects on the forward conduction performance and surge current capability were studied. Device forward characteristics were simulated and measured. Standard single-pulse surge current tests and thermal impedance measurements were carried to show their surge capability and thermal design differences. An advanced thermal RC (thermal resistance-capacitance) model, with the consideration of current distribution non-uniformity effects, is proposed to accurately calculate the device junction temperature during surge events. It was found that a thinner substrate and a hexagonal layout design are beneficial to the improvement of the bipolar conduction performance in high current mode, as well as the surge current capability. The thinner substrate design also has advantages on thermal aspects, as it presents the lowest thermal resistance. The calculated failure temperature during the surge tests is consistent with the aluminum melting phenomenon, which is regarded as the failure mechanism. It was demonstrated that, for a SiC MPS diode, higher bipolar conduction performance is conducive to restraining the joule heat, and a lower thermal resistance design is able to accelerate the heat dissipation and limit the junction temperature during surge events. In this way, the MPS diode using a thinner substrate and advanced layout design technology is able to achieve 60% higher surge current density capability compared to the other technologies.

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“…[1][2][3] The metal/SiC Schottky contact, as one of the most important basic structures, has aroused great interest for its high switching speed, low forward voltage drop, high performance power devices, which are prompted due to the high demand for the electric power conversion areas such as the power supplies, motor control, electric hybrid vehicles, traction, and electric power transmission. [4,5] Nowadays, Ti, Ni, Mo, and W contacts are typically employed as the Schottky contacts in the 4H-SiC rectifiers such as the high-voltage JBS diodes. [6][7][8][9] The investigation of this contact under the various conditions is essential for a clearer understanding and, eventually, effectively control of these properties.…”

Section: Introductionmentioning

confidence: 99%

Hysteresis effect in current–voltage characteristics of Ni/n-type 4H-SiC Schottky structure*

Yuan¹,

Song²,

Han³

et al. 2019

Chinese Phys. B

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Hysteresis current–voltage (I–V) characteristics are often observed in a highly non-ideal (n > 2) as-deposited nickel (Ni)/4H-SiC Schottky contact. However, we find that this kind of hysteresis effect also exists in an as-deposited Ni/n-type 4H-SiC Schottky structure even if the ideality factor (n) is less than 1.2. The hysteresis I–V characteristics is studied in detail in this paper by using the various measurements including the hysteresis I–V, sequential I–V sweeping, cycle I–V, constant reverse voltage stress (CRVS). The results show that the hysteresis I–V characteristics are strongly dependent on the sweeping voltage and post-deposition annealing (PDA). The high temperature PDA (800 °C) can completely eliminate this hysteresis. Meanwhile, the magnitude of the hysteresis effect is shown to decrease in the sequential I–V sweeping measurement, which is attributed to the fact that the electrons tunnel from the 4H-SiC to the localized states at the Ni/n-type 4H-SiC interface. It is found that the application of the reverse bias stress has little effect on the emission of those trapped electrons. And a fraction of the trapped electrons will be gradually released with the time under the condition of air and with no bias. The possible physical charging mechanism of the interface traps is discussed on the basis of the experimental findings.

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A New 1200V SiC MPS Diode with Improved Performance and Ruggedness

Cited by 16 publications

References 7 publications

Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model

Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

Hysteresis effect in current–voltage characteristics of Ni/n-type 4H-SiC Schottky structure*

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