A new analytic method to design multiple floating field limiting rings of power devices

He, Jin; Chan, Mansun; Zhang, Xing; Wang, Yangyuan

doi:10.1016/j.sse.2006.06.012

Cited by 25 publications

(24 citation statements)

References 15 publications

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“…A modification of the breakdown model has been introduced in [24] which caters the effects of planar junction area, cylindrical junction, and spherical junction. The model further assumes that the potential and the edge peak electric field of a ring junction are altered by the effect of neighboring ring only, due to the screening effect [23]. Hence, the edge peak field and the reverse voltage sustained by each ring junction can be estimated by considering only a particular ring junction (e.g.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, extensive research has been devoted to develop an accurate model for the breakdown voltage prediction and thus can be applied to termination structure optimization, such that the electric field could be efficiently re-distributed and field crowding could be avoided. The termination ring structure modeling and optimization methods can be classified into the simulator-based approaches [21,22] and analytical approaches [23,24].…”

Section: Introductionmentioning

confidence: 99%

“…The analytical approach presented by He et al [23] considers the three-dimensional (3-D) corner field crowding effect at mask edges, which has shown to be able to achieve superior results than those using two-dimensional (2-D) analysis [25,26] since this effect is actually 3-D in nature, and is usually observed at junction extremes, such as the junction curvature and corners. Furthermore, the absence of a coupling coefficient in this approach also simplifies the design optimization process.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, the absence of a coupling coefficient in this approach also simplifies the design optimization process. However, the method in [23] only considers the planar junction area and cylindrical junction effect but neglects the effect of the spherical junction by conjecturing that the spherical junction effect can be suppressed by layout techniques [7]. This over-simplified analysis results in underestimating the breakdown voltage and hence, in increasing the size of the designed termination structure.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Modeling of terminal ring structures for high-voltage power MOSFETs

Tam

Siu

Wong

et al. 2012

Microelectronics Reliability

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Modeling of terminal ring structures for high-voltage power MOSFETs

Tam

Siu

Wong

et al. 2012

Microelectronics Reliability

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“…To calculate V M0 , V M and V F , the Poisson's equation in the cylindrical coordinates must be used [14,15].…”

Section: Descriptive Modeling Of the Field-ring Characteristicsmentioning

confidence: 99%

A Study of Field-Ring Design using a Variety of Analysis Method in Insulated Gate Bipolar Transistor (IGBT)

Jung¹,

Kyoung²,

Chung³

et al. 2014

Journal of Electrical Engineering and Technology

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-Power semiconductor devices have been the major backbone for high-power electronic devices. One of important parameters in view of power semiconductor devices often characterize with a high breakdown voltage. Therefore, many efforts have been made, since the development of the Insulated Gate Bipolar Transistor (IGBT), toward having higher level of breakdown voltage, whereby the typical design thereof is focused on the structure using the field ring. In this study, in an attempt to make up more optimized field-ring structure, the characteristics of the field ring were investigated with the use of theoretical arithmetic model and methodologically the design of experiments (DOE). In addition, the IGBT having the field-ring structure was designed via simulation based on the finding from the above, the result of which was also analyzed. Lastly, the current study described the trench field-ring structure taking advantages of trench-etching process having the improved field-ring structure, not as simple as the conventional one. As a result of the simulation, it was found that the improved trench field-ring structure leads to more desirable voltage divider than relying on the conventional field-ring structure.

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