A New Analytical Method for Robust Extraction of the Small-Signal Equivalent Circuit for SiGe HBTs Operating at Cryogenic Temperatures

Olvera‐Cervantes, José‐Luis; Cressler, John D.; Medina-Monroy, José Luis; Thrivikraman, Tushar; Banerjee, Bhaskar; Laskar, J.

doi:10.1109/tmtt.2008.916917

Cited by 11 publications

(11 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3) When the highest order terms in (13) and (14) are chosen as 3 (i.e., ), we can arrive at the following expressions:…”

Section: A Distributed Network For Link Base Region (Region I)mentioning

confidence: 99%

“…Some of them are based on the numerical optimization and the results might be nonphysical [13]. To overcome this problem, some analytical or semianalytical methods are proposed [14]- [18] in which all the elements are mainly obtained by an analytical equation derived under certain assumptions and approximations. The approximations are based on the frequency dependence of the model parameters, assuming that the higher order terms in frequency are generally much smaller than the lower ones; therefore, the higher order terms can be ignored to simplify the equivalent-circuit equation [19].…”

mentioning

confidence: 99%

See 1 more Smart Citation

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Sun

Yang

et al. 2015

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

An improved high-frequency small-signal model for SiGe HBTs under the off-state is presented in this paper. The proposed model takes into account the distribution characteristics of the intrinsic transistor, link base region under spacer, and extrinsic base-collector junction. The equivalent circuit for each region is separately derived using the transmission line equation with reasonable approximations. Being different from previous models, the intrinsic base resistance in the proposed model is pushed inside the internal base node and added to the components of collector and emitter resistance. To extract all the parameters for the proposed model, a novel extraction technique based on rational function fitting over the whole range of frequencies is developed. After the rational function fitting to related admittance parameters, a number of coefficients are accurately obtained and then all the model parameters are directly extracted without any special test structure or numerical optimization. The proposed model and extraction technique are validated with a series of sized SiGe HBTs from 100 MHz to 20.89 GHz at a wide range of bias points. An excellent agreement is obtained between the measured and simulated S-parameters.

show abstract

“…3) When the highest order terms in (13) and (14) are chosen as 3 (i.e., ), we can arrive at the following expressions:…”

Section: A Distributed Network For Link Base Region (Region I)mentioning

confidence: 99%

mentioning

confidence: 99%

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Sun

Yang

et al. 2015

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…For example, when we directly optimize the measured Y-parameters without constraints, the emitter resistance tends to be bias dependent, which is obviously unphysical [5]. Thus, as demonstrated by [8][9][10][11][12][13][14], a trend has been observed toward analytical or semianalytical parameter extractions, where all the elements in the small-signal equivalent circuit were obtained by analytical equations directly. However, the derived circuit equations have been more or less simplified either by neglecting some terms depending on the frequency range (low-middle-high frequencies) or by making some assumptions and approximations specifically for facilitating the direct parameter extraction.…”

Section: Introductionmentioning

confidence: 99%

Novel analytical parameter extraction for SiGe HBTs based on the rational function fitting

Sun

Yang

et al. 2015

Superlattices and Microstructures

View full text Add to dashboard Cite

“…The available previous few works that directly extract π‐topology model of the Si/SiGe HBT devices are introduced in Refs. 9–12. Special polarization for the device, frequency approximations, and least square fit are needed to extract the model parameters [9, 11].…”

Section: Introductionmentioning

confidence: 99%

Direct extraction technique of π‐topology small‐signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor

Taher

2012

Micro & Optical Tech Letters

View full text Add to dashboard Cite

A developed direct extraction technique of small‐signal π‐topology Small signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor is presented.The intrinsic model parameters are analytically extracted. The extraction procedure is performed using new set of exact equations that do not need numerical fitting, special polarization of the device or any kind of post processing. Flat frequency response of the extracted parameters is obtained. Excellent agreement is noticed between S‐parameters measurements and its simulated counterpart using the extracted model in the frequency range from 40 MHz to 20 GHz at different bias conditions. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:584–589, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26635

show abstract

A New Analytical Method for Robust Extraction of the Small-Signal Equivalent Circuit for SiGe HBTs Operating at Cryogenic Temperatures

Cited by 11 publications

References 32 publications

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Novel analytical parameter extraction for SiGe HBTs based on the rational function fitting

Direct extraction technique of π‐topology small‐signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor

Contact Info

Product

Resources

About