A new and simple measurement approach for characterizing intermodulation distortion without using a spectrum analyzer

Madan, Anuj; Thrivikraman, Tushar; Seth, Sachin; Verma, Rohan; Poh, John Chung Hang; Cressler, John D.

doi:10.1109/smic.2010.5422963

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B Noise and Linearity Measurements 1) Power Gain And Linear1

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2011

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“…The measurement setup is described in [6]. For linearity, the RF power was swept for two input tones (3.000 and 3.008 GHz), ensuring smallsignal operation, and the output fundamental and third-order intermodulation (IMD) terms were measured.…”

Section: B Noise and Linearity Measurements 1) Power Gain And Linearmentioning

confidence: 99%

On the RF Properties of Weakly Saturated SiGe HBTs and Their Potential Use in Ultralow-Voltage Circuits

Seth

Najafizadeh²,

Cressler

2011

IEEE Electron Device Lett.

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We investigate, for the first time, the feasibility of operating silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in a weakly saturated bias regime to enable ultralow-voltage RF front-end design. Measured dc, ac, and RF characteristics of third-generation high-performance SiGe HBTs operating in weak saturation are presented. Robust RF operation of 0.12 × 6.0 μm 2 SiGe HBTs are demonstrated in a common-emitter configuration at collector-to-emitter voltages above 0.15 V. A noise figure of 1.33 dB and an input third-order intercept point above −8 dBm for a 3-GHz input tone are achieved at 0.30 V. These results have potential implications for RF circuits used in severely power-constrained systems.

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Section: B Noise and Linearity Measurements 1) Power Gain And Linearmentioning

confidence: 99%

On the RF Properties of Weakly Saturated SiGe HBTs and Their Potential Use in Ultralow-Voltage Circuits

Seth

Najafizadeh²,

Cressler

2011

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

show abstract

A new and simple measurement approach for characterizing intermodulation distortion without using a spectrum analyzer

Cited by 1 publication

References 7 publications

On the RF Properties of Weakly Saturated SiGe HBTs and Their Potential Use in Ultralow-Voltage Circuits

On the RF Properties of Weakly Saturated SiGe HBTs and Their Potential Use in Ultralow-Voltage Circuits

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