A new approach based on transfer matrix formalism to characterize porous silicon layers by reflectometry

Pirasteh, Parastesh; Boucher, Yann; Charrier, Joël; Dumeige, Yannick

doi:10.1002/pssc.200674345

Cited by 8 publications

(3 citation statements)

References 11 publications

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“…The effective refractive indices were calculated using Bruggeman's effective medium model [21]. The transfer matrix method was used to compute the reflectance spectrum of the pSiMC (Figure 3) [22]. PMLs were added at the top and bottom of the pSiMC to truncate the unbounded computational region by absorbing the outgoing waves.…”

Section: Theoretical Calculationsmentioning

confidence: 99%

Enhanced fluorescence emission of a single quantum dot in a porous silicon photonic crystal—plasmonic hybrid resonator

Granizo,

Kriukova,

Escudero-Villa

et al. 2024

J. Phys.: Conf. Ser.

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Currently, much interest is attracted to investigating the potential of hybrid systems that exhibit plasmon-induced photoluminescence (PL) enhancement of quantum emitters in terms of optoelectronics and biosensing applications. The implementation of these systems based on photonic microcavities offers benefits due to a stronger localization of the field within the resonant cavity. Porous silicon is one of interesting materials for engineering such microcavities thanks to the simplicity of its fabrication and the possibility to embed emitters from the solution into a ready-made resonator. In this theoretical study, the fluorescence enhancement of a quantum dot (QD) in a hybrid system based on a porous silicon microcavity (pSiMC) and silver nanoplatelets (AgNPs) was investigated using finite element method (FEM) numerical simulations. For this purpose, infinite arrays were simulated by using a periodic unit cell. The pSiMC was designed as two λ/4 distributed Bragg reflectors with alternating refractive indices and a cavity layer of a double thickness between them. For comparison, simulations were also performed for an AgNP and a QD in a reference monolayer with a constant refractive index without a microcavity structure. The results show QD fluorescence enhancement in the AgNP/pSiMC hybrid system, mainly due to the higher excitation rate.

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Section: Theoretical Calculationsmentioning

confidence: 99%

Enhanced fluorescence emission of a single quantum dot in a porous silicon photonic crystal—plasmonic hybrid resonator

Granizo,

Kriukova,

Escudero-Villa

et al. 2024

J. Phys.: Conf. Ser.

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“…1) with the (AB)6A2(BA)6 structure, a resonance at 605 nm, and layers with a quarter wave optical thickness with high and low refractive indices. The pSiMC reflection spectrum was calculated using a transfer matrix [6]. PMLs were added at the pSiMC top and bottom to truncate the unbounded computational region by absorbing the outgoing waves.…”

Section: Numerical Simulationmentioning

confidence: 99%

Enhancement of Quantum Dot Fluorescence by a Metal Nanoparticle/Porous Silicon Microcavity Hybrid System

Granizo,

Kriukova,

Samokhvalov

et al. 2023

EPJ Web Conf.

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Enhancement of quantum dot (QD) fluorescence in a hybrid system of a porous silicon microcavity (pSiMC) and silver nanoplatelets (AgNPs) has been estimated using numerical simulation. The system was simulated as a periodic unit cell made of a pSiMC with a resonant wavelength peak at 605 nm, an AgNP with a resonance at 604 nm and a quantum dot (QD) with an emission peak at 605 nm. For comparison, simulations were performed for an AgNP and a QD in a reference single-layered system with a high refractive index. The QD fluorescence was enhanced in the AgNP/pSiMC hybrid system, mainly due to the higher excitation rate.

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“…The transfer matrix (TM) method has been widely used to determine the values of the optical constants and thickness of thin films from their reflectance spectra in the visible wavelength range [1][2][3][4][5]. The photon transport through the multilayered structure is usually described using the TM method.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the Thickness in Nanolayers Using the Transfer Matrix Method for Modeling the Spectral Reflectivity

González-Ramírez

Fuentes

Hernández

2009

Research Letters in Physics

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The reflectivity spectra have been traditionally used to determine the thicknesses in semiconductor films. However, thicknesses of nanofilms are not easy to evaluate because the interference fringes are not visible in the transparent region. In this paper, we present a computed method based on the transfer matrix (TM) which is used to match the calculated and experimental room temperature reflectivity spectra of the ZnTe/GaAs films and to determine its thickness film values afterwards. The TM method needs only to know refraction indices and absorption coefficients as a function of wavelength for the film and the substrate. The thickness nanofilms evaluated by our method are in agreement with the values measured by ellipsometry, Rutherford backscattering spectroscopy and transmission electron microscopy techniques. The present procedure extends the application of the standard spectral reflectance technique to determine semiconductor nanolayer thicknesses.

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A new approach based on transfer matrix formalism to characterize porous silicon layers by reflectometry

Cited by 8 publications

References 11 publications

Enhanced fluorescence emission of a single quantum dot in a porous silicon photonic crystal—plasmonic hybrid resonator

Enhanced fluorescence emission of a single quantum dot in a porous silicon photonic crystal—plasmonic hybrid resonator

Enhancement of Quantum Dot Fluorescence by a Metal Nanoparticle/Porous Silicon Microcavity Hybrid System

Evaluation of the Thickness in Nanolayers Using the Transfer Matrix Method for Modeling the Spectral Reflectivity

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