A new approach for broadband photosensing based on Ag2Se/Si heterojunction tuned by Pyro-phototronic effect

Annealing effect on the pyro-phototronic behaviour in Al/nanostructured PS-ML: p+-Si Schottky photovoltaic device

“…The pyroelectric effect and the photovoltaic effect couple together, to develop a new mechanism called pyro-phototronic effect [1][2][3][4][5][6][7][8][9], which has an excellent role in enhancing device photo sensing performance. It is now well-known phenomenon which contributes specifically for enhanced UV sensing purpose and basically observed in materials with noncentro symmetric crystal structure like ZnO, CdS, GaN and some organic materials like crystalline rubrene [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27]. The phenomenon has been first observed by Z. Wang et al [28] in perovskite ZnO nanowires heterojunction-based photodetector.…”

Circularly Polarized Light-Dependent Pyro-Phototronic Effect from 2D Chiral–Polar Double Perovskites

“…Until now, the existing CPL detectors have mainly been based on photoelectric conversion characteristics. As a special mechanism to enhance the photodetection capability, the multicoupling effect has become a new research trend, such as the piezo-phototronic effect, photothermoelectric effect, bolometric effect, pyro-phototronic effect, etc. , Among them, the pyro-phototronic effect obtained by the tripartite coupling effect of semiconductor properties, photonic excitations, and pyroelectric effect, which have attracted extensive attention due to their potential in broadband detection, biomedical imaging, and environmental remote sensing. − Under instant illumination by photons, polar materials featuring intrinsic spontaneous polarization ( P s ) can generate photoinduced pyroelectric potentials, mainly governed by the temperature changes between their two ends. , The generated pyro-potential can effectively modulate the generation, separation, transport, and recombination of the carriers and thus significantly improve the corresponding device performances. , Therefore, the pyro-phototronic effect has gained great attention in the photodetectors field because of its impressive boost in responsivity, response speed, and response spectral range. , However, the existing pyro-phototronic effect candidates are only limited to a few inorganic materials and heterojunctions, such as BaTiO 3 , ZnO nanostructures, and the SnS/CdS heterostructure, which are not competitive candidates for polarized light detection. ,, Therefore, combining the pyro-phototronic effect with chiroptical phenomena is an excellent option for boosting the performance of CPL photodetection.…”

“…As a special mechanism to enhance the photodetection capability, the multicoupling effect has become a new research trend, such as the piezo-phototronic effect, photothermoelectric effect, bolometric effect, pyro-phototronic effect, etc. 6,7 Among them, the pyro-phototronic effect obtained by the tripartite coupling effect of semiconductor properties, photonic excitations, and pyroelectric effect, which have attracted extensive attention due to their potential in broadband detection, biomedical imaging, and environmental remote sensing. 8−11 Under instant illumination by photons, polar materials featuring intrinsic spontaneous polarization (P s ) can generate photoinduced pyroelectric potentials, mainly governed by the temperature changes between their two ends.…”

Coupling of Pyro–Piezo-Phototronic Effects in a GaN Nanowire

“…Piezoelectric semiconductors (PSCs) have attracted research attention in the fields of ultraviolet detection, optical recognition device switch and sensor technology [ 1 ]. Due to their multi-field coupling characteristics, PSCs can convert multiple physical field signals, such as force [ 2 , 3 , 4 , 5 ], electricity [ 6 , 7 ], and light [ 8 , 9 , 10 ], into electrical signals. In 2010, Wang [ 11 ] provided the concept of piezo-phototronics, which deploys the piezopotential caused by strain to regulate the recombination of carriers and improve the efficiency of optoelectronic devices [ 12 , 13 , 14 ].…”