A new approach to achieving high granularity for silicon diode detectors with impact ionization gain

Ayyoub, S.; Gee, C. M.; Islam, Rashidul; Mazza, S. M.; Schumm, B. A.; Seiden, A.; Zhao, Y.

doi:10.48550/arxiv.2101.00511

Cited by 3 publications

(3 citation statements)

References 15 publications

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“…Recent developments, for example the Trench Isolated LGAD (TI-LGAD), AC-coupled LGAD (AC-LGAD) and Deep Junction LGAD (DJ-LGAD) have shown very good progress in this respect. However, they need further developments in order to be used in soft X-ray experiments [10][11][12].…”

Section: Lgad Optimizationmentioning

confidence: 99%

Development of LGAD sensors with a thin entrance window for soft X-ray detection

et al. 2022

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We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the soft X-ray energy range possible. In this paper, we report first results obtained from an LGAD sensor production with an optimized thin entrance window. Single photon detection of soft X-rays down to 452 eV has been demonstrated from measurements, with a signal-to-noise ratio better than 20.

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Section: Lgad Optimizationmentioning

confidence: 99%

Development of LGAD sensors with a thin entrance window for soft X-ray detection

et al. 2022

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“…Trench-isolated (TI) LGADs [25] replace the JTE with a silicon oxide-filled trench of width < 1 micron and depth a few microns. Deep Junction (DJ) LGADs [26] eliminate the JTE, pair a p ++ gain layer with an n ++ layer to lower the field, and bury the junction about 5 microns below the surface to maintain low fields at the surface. Sufficient gain is maintained although the field outside the electrodes is low.…”

Section: Incorporating Internal Gain: Low Gain Avalanche Detectorsmentioning

confidence: 99%

Radiation hardness challenges for vertex detection in the future

Seidel

2024

Proceedings of the 32nd International Workshop on Vertex Detectors — PoS(VERTEX2023)

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Radiation tolerance specifications for experiments at several future particle colliders are summarized. The role of tracking systems and timing systems in vertexing is emphasized, and so the consequences of radiation damage upon both types of systems are discussed. Challenges to vertexing that arise from radiation damage in semiconductor detectors are reviewed. Features observed in detector response at the highest controlled fluences are noted. Approaches to mitigate the effects of radiation damage and thereby achieve excellent tracking and timing are reviewed.

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“…If we consider a pitch of ∼ 100 µm, then the fill factor with standard LGADs is only ∼ 25%. To overcome this issue, a number of different approaches have been proposed in recent years, such as the resistive silicon detector (RSD) (The AC-coupled resistive silicon detector (AC-RSD), also known as AC-coupled low gain avalanche detector (AC-LGAD) and DC-coupled resistive silicon detector (DC-RSD) are sub families within the RSD technology), the inverse low gain avalanche detector (iLGAD), the deep junction low gain avalanche detector (DJ-LGAD), and the TI-LGAD [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Characterization of the TI-LGAD Technology

Senger

Macchiolo

Kilminster

et al. 2023

Sensors

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Pixelated low-gain avalanche diodes (LGADs) can provide both precision spatial and temporal measurements for charged particle detection; however, electrical termination between the pixels yields a no-gain region, such that the active area or fill factor is not sufficient for small pixel sizes. Trench-isolated LGADs (TI-LGADs) are a strong candidate for solving the fill-factor problem, as the p-stop termination structure is replaced by isolated trenches etched in the silicon itself. In the TI-LGAD process, the p-stop termination structure, typical of LGADs, is replaced by isolating trenches etched in the silicon itself. This modification substantially reduces the size of the no-gain region, thus enabling the implementation of small pixels with an adequate fill factor value. In this article, a systematic characterization of the TI-RD50 production, the first of its kind entirely dedicated to the TI-LGAD technology, is presented. Designs are ranked according to their measured inter-pixel distance, and the time resolution is compared against the regular LGAD technology.

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A new approach to achieving high granularity for silicon diode detectors with impact ionization gain

Cited by 3 publications

References 15 publications

Development of LGAD sensors with a thin entrance window for soft X-ray detection

Development of LGAD sensors with a thin entrance window for soft X-ray detection

Radiation hardness challenges for vertex detection in the future

A Comprehensive Characterization of the TI-LGAD Technology

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