2012
DOI: 10.1039/c2ce25976a
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A new approach to free-standing GaN using β-Ga2O3 as a substrate

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Cited by 42 publications
(25 citation statements)
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“…One exception was the growth on β‐Ga 2 O 3 substrates. The layers quality was only slightly improved, but regularly a self‐lift off occurred . The figure reveals the influence of different seeds on the grown layer.…”
Section: Resultsmentioning
confidence: 97%
See 1 more Smart Citation
“…One exception was the growth on β‐Ga 2 O 3 substrates. The layers quality was only slightly improved, but regularly a self‐lift off occurred . The figure reveals the influence of different seeds on the grown layer.…”
Section: Resultsmentioning
confidence: 97%
“…As a follow up to the work presented in, the growth of single crystalline, carbon doped gallium nitride (GaN) layers from the gas phase was developed. The goal of this work was to prepare samples for the study of carbon behaviour in GaN and to achieve semi‐insulating (SI) material for power electronics.…”
Section: Introductionmentioning
confidence: 99%
“…Распределение частиц по размерам регистрировали методом динамического светорассеяния (ДСР) на приборе Malvern Zetasizer Nano при температуре 298 K. Рамановские спектры были измерены при комнатной температуре на спектрометре Horiba Jobin Yvon T64000 с использованием в качестве источника излучения второй гармоники Nd : YAG-лазера (λ = 532 нм), плотность возбуждения на поверхности образца не превышала P = 2 кВт/см 2 . [33,34]), который реагирует с оксидом галлия [35,36]:…”
Section: методика экспериментаunclassified
“…The cracking of a GaN layer can be suppressed by growing a bulk GaN layer with a thickness of several millimeters, or by reducing the bonding energy between a substrate and a GaN layer. Different methods were proposed to reduce the bonding energy between a substrate and a GaN layer, including porous layers created by dry etching [4], wet etching [5], electrochemical etching [6] or GaN decomposition induced by a TiN mask [7]; epitaxial lateral overgrowth over dielectric masks [8][9][10][11], employing substrates with a cleavage plane parallel to the c-axis of GaN [12,13], and weakly bonded buffer layers [14,15]. All these methods either require using non-standard substrates [12,13] or special ex situ pre-growth processing of the substrate like etching, buffer layer deposition, dielectric or metal mask fabrication, or GaN template structure growth.…”
Section: Introductionmentioning
confidence: 99%