A new approach to model nonquasi-static (NQS) effects for mosfets-part II: small-signal analysis

Roy, Anirban; Vasi, J.; Patil, Mukesh D.

doi:10.1109/ted.2003.819054

Cited by 6 publications

(2 citation statements)

References 9 publications

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“…It is difficult to estimate analytically for transient simulation. However, we have outlined a procedure to estimate in an accompanying paper [12] for small-signal analysis.…”

Section: Solution Using Galerkin's Methodsmentioning

confidence: 99%

A new approach to model nonquasi-static (NQS) effects for mosfets-part I: large-signal analysis

Roy

Vasi

Patil

2003

IEEE Trans. Electron Devices

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This paper presents a new nonquasi-static (NQS) model for the MOSFET. The model is derived from physics and only relies on the very basic approximation needed for a charge-based model. To derive the model, a popular variational technique named Galerkin's Method has been used. The model proves to be very accurate even for extremely fast changes in the bias voltages. Simulation results show a very good match even when the rise time of the applied signal is smaller than the transit time of the device.

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“…It is difficult to estimate analytically for transient simulation. However, we have outlined a procedure to estimate in an accompanying paper [12] for small-signal analysis.…”

Section: Solution Using Galerkin's Methodsmentioning

confidence: 99%

A new approach to model nonquasi-static (NQS) effects for mosfets-part I: large-signal analysis

Roy

Vasi

Patil

2003

IEEE Trans. Electron Devices

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“…In order to get the 3 3 -parameters of the shunt parasitics, the same procedure is followed for an "open" structure. One-step deembedding method then gives (6) where is the deembedded -parameter matrix and is assembled from , , and .…”

Section: A -Parametersmentioning

confidence: 99%

Look-Up Table Approach for RF Circuit Simulation Using a Novel Measurement Technique

Agarwal

Jha

Kumar

et al. 2005

IEEE Trans. Electron Devices

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Abstract-A simple and novel measurement technique to obtain three-port network-parameters of MOS transistors from two-port measurements on a single test structure is presented. The measured data is used in the form of a lookup table (LUT) for RF circuit simulation. It is shown that simulation results obtained with the LUT approach for a 2.4-GHz low-noise amplifier match very well with measurements, thus demonstrating the usefulness of the LUT approach. It is also shown that, for high frequencies, it is important to use the tables of -parameters actually measured rather than those interpolated from low-frequency measurements. This is illustrated with a tuned amplifier simulation example.

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RF Analysis of Double-Gate Junctionless Tunnel FET for Wireless Communication Systems: A Non-quasi Static Approach

Sharma

Madan

Pandey

et al. 2020

Journal of Elec Materi

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A new approach to model nonquasi-static (NQS) effects for mosfets-part II: small-signal analysis

Cited by 6 publications

References 9 publications

A new approach to model nonquasi-static (NQS) effects for mosfets-part I: large-signal analysis

A new approach to model nonquasi-static (NQS) effects for mosfets-part I: large-signal analysis

Look-Up Table Approach for RF Circuit Simulation Using a Novel Measurement Technique

RF Analysis of Double-Gate Junctionless Tunnel FET for Wireless Communication Systems: A Non-quasi Static Approach

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