A new approach to the modeling of Si‐RFIC inductor

Abstract

In this paper, a new and simplified approach is proposed to model a radio frequency integrated circuit (RFIC) inductor in Si technology using Fuzzy Logic. An inductor structure made of a single‐layer metal ring fabricated on a silicon substrate is considered in the present analysis. The resistivity of the substrate layer, the thickness of SiO2 layer, and the frequency are considered as variable input parameters for the proposed model in order to calculate the effective inductance as output. The model results are then compared with the results obtained analytically using an equivalent circuit and reasonably good agreement is found within the scope of the model. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1095–1101, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21610

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