2020
DOI: 10.1039/c9nr08712e
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A new approach to the fabrication of VO2 nanoswitches with ultra-low energy consumption

Abstract: The use of VO2 single crystals with embedded nanotips leads to the 4.2 fJ energy consumption per switching and ensures a high stability and endurance of the nanoswitches.

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Cited by 23 publications
(7 citation statements)
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“…Figure a shows electrical resistivity curves as functions of temperature for undoped and doped VO 2 thin-film samples S1–S4 during the heating/cooling cycle. All dependences demonstrate an identical trend corresponding to the common behavior of the VO 2 (M 1 ) crystal: a slow decrease in the resistivity of the insulating phase below the transition temperature and an abrupt decrease at metal–insulator transition. To describe the change of the MIT transition temperature ( T MIT ) and the sharpness of the resistivity change, T heat and T cool are defined as the corresponding peak positions of the derivative curves d­(log­( R ))/d T during heating and cooling, respectively. T MIT was defined as T MIT = ( T heat + T cool )/2.…”
Section: Resultsmentioning
confidence: 98%
“…Figure a shows electrical resistivity curves as functions of temperature for undoped and doped VO 2 thin-film samples S1–S4 during the heating/cooling cycle. All dependences demonstrate an identical trend corresponding to the common behavior of the VO 2 (M 1 ) crystal: a slow decrease in the resistivity of the insulating phase below the transition temperature and an abrupt decrease at metal–insulator transition. To describe the change of the MIT transition temperature ( T MIT ) and the sharpness of the resistivity change, T heat and T cool are defined as the corresponding peak positions of the derivative curves d­(log­( R ))/d T during heating and cooling, respectively. T MIT was defined as T MIT = ( T heat + T cool )/2.…”
Section: Resultsmentioning
confidence: 98%
“…The heterostructurebased device also displayed moderate stability with an endurance of $10 5 cycles. Further, VO 2 -based nano resistive switches consuming only 4.2 fJ of energy per switching are fabricated by a novel approach [28], whereby VO 2 nanocrystals are embedded in conductive Si tips with an effective lateral size of about 100 nm, after 30mins of synthesis. More importantly, at room temperature, the nanocrystal-based VO 2 devices showed a switching from HRS to LRS at $0.1 V. Additionally, the device showed a high stability of cyclic switching process with endurance longer than 10 11 cycles.…”
Section: (C) Bipolar Switching Characteristics (Black) Of Mos 2 Devic...mentioning
confidence: 99%
“…The further development of magnetic robotics requires a decrease in the size and an increase in the speed of artificially created bioinspired counterparts for gene delivery and therapy [ 174 , 175 , 176 ]. Modern control methods should ensure the imitation of the group behavior of micro-/nanorobots with the «intelligence of a bee swarm» using high-precision magnetic fields [ 177 , 178 , 179 ]. We can expect the development of this topic due to the emergence of more advanced techniques of additive manufacturing, which allows the formation of sophisticated structures on an industrial scale by parallel methods [ 180 , 181 ].…”
Section: Conclusion and Prospects For The Futurementioning
confidence: 99%