A New Backscattering Model for Nano-MOSFET Compact Modeling

Fuchs, E.F.; Dollfus, P.; Lecarval, G.; Robilliart, E.; Barraud, S.; Villanueva, D.; Jaouen, H.

doi:10.1007/978-3-7091-0624-2_58

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“…This probability of backscattering is illustrated in Figure 3: (6) and the coefficient Rc is deduced by taking into account the carrier distribution as illustrated in Figure 4: This backscattering model can correctly reproduce the universal mobility based on the Takagi data [6]. Finally, thanks to 2 fitting parameters for the description of short channel effects, the charge at the top of the barrier is computed and the I(V) characteristics are modelled and validated by Monte Carlo simulation as illustrated in Figure 5.…”

Section: Pr ()mentioning

confidence: 99%

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A New Quasi Ballistic Model for Strained MOSFET.

Fuchs

Orain

Ortolland

et al. 2005

2005 International Conference on Simulation of Semiconductor Processes and Devices

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Phone: +33 4 76 92 26 75.Abstract -An analytical model for the nano-MOSFET based on the determination of ballistic and backscattering probabilities along the channel is developed. This model, validated by analysis of transport in device using scattering spectroscopy, has been used to model the strained MOSFET by evaluating the appropriate scattering relaxation times and the carrier distribution. Finally, it has been used to determine the impact of CESL on the ION enhancement. I-INTRODUCTIONRecent works showed that the local strain generated in Si using technology process steps is a promising way to improve the ION /IOFF trade-off [1]. The strain distribution can be computed using finite elements simulation [2].We propose here a general compact model to study the stress impact on I(V) characteristics. The Bir-Pikus theory is used to calculate the valley splitting in Si as a function of local strain [3]. The scattering relaxation times and the carrier distribution are deduced. From these new inputs, an accurate determination of ballistic and backscattering probabilities along the channel is used to compute the backscattering coefficient and the I(V) characteristic as explained in [4]. This model is validated by scattering spectroscopy resulting from Monte Carlo (MC) simulation for a Si/SiO7Ge0.3 MOSFET and it is used to study the effects of Strained Contact Etch Stop Layer (CESL) on 65 nm MOS transistor performance. II-ANALYTICAL QUASI BALLISTIC MODELThe model developed in [5] allows determining the backscattering coefficient Rc and the injection velocity to calculate the current IDS:To determine Rc, the first step consists in determining the potential profile at VDS and VGS, which is done from evaluation of the saturation drain voltage and the length of the pinch off zone by taking into account the access resistance as illustrated in Figure 1. The expression used for the potential was validated in [4].Secondly, we compute the average thermal velocity from the conduction effective mass taking into account the carrier distribution P.,Py,Pz in the different types of A valleys:Then, from the scattering relaxation times and the velocity of ballistic carriers we obtain the ballistic probabilities Nbal2i(x) (Fig. 2) along the channel as:For different drain and gate voltages, the model is validated for the MOSFET described in [6] (Figure 2). 90% 0 MC VD=0.8V 80% * o o s | MC VD=05V 80%~~& MC VD00020 70% -Model iD=0.8V 3 60%-t -Model VD=0.5V -Model VD=0.2V u 40%-3n0%4 20%

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Section: Pr ()mentioning

confidence: 99%

“…For different drain and gate voltages, the model is validated for the MOSFET described in [6] ( Figure 2). From the probability Nbal i(x) we can deduce the probability Nsca-it(x) for an electron to have its first scattering event at position x:…”

Section: Ii-analytical Quasi Ballistic Modelmentioning

confidence: 99%