A New Backscattering Model Giving a Description of the Quasi-Ballistic Transport in Nano-MOSFET

“…We consider here the dynamical mean free path which is a 'local free path of ballistic carriers' [8]. This characteristic length represents the average distance to be crossed before the next scattering event.…”

Section: Ballistic and Quasi-ballistic Transportmentioning

confidence: 99%

“…The dynamic mean free path (dfp) connects the ballistic velocity and all interactions (coulomb and acoustic/optical phonon interaction) experienced by carriers crossing the channel. The scattering process with impurities (t imp ) and phonon interactions (t ph ) are calculated as in [8] and the value of dfp used here is 27 nm in the intrinsic silicon channel. In practice, dfp replaces l to describe quasi-ballistic transport…”

Section: Ballistic and Quasi-ballistic Transportmentioning

confidence: 99%

Analytical modelling and performance analysis of double-gate MOSFET-based circuit including ballistic/quasi-ballistic effects

Martinie

Munteanu

Carval

et al. 2009

Molecular Simulation

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In this paper, we present a compact model of double-gate MOSFET architecture including ballistic and quasi-ballistic transport down to 20 nm channel length. In addition, this original model takes into account short-channel effects (SCE/DIBL) by a simple analytical approach. The quasi-ballistic transport description is based on Lundstrom's backscattering coefficient given by the so-called flux method. We also include an original description of scattering of processes by introducing the 'dynamical mean free path' formalism. Moreover, we implemented our model in a Verilog-A environment, and applied it to the simulation of circuit elements such as CMOS inverters and ring oscillators to analyse the impact of ballistic/quasi-ballistic transport on circuit performances. Finally, in order to validate our work, we confronted this model with numerical simulation of CMOS and ring oscillator in ballistic case.

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“…The scattering model has provided new insights into ballistic transport over drift-diffusion transport. Using this model, the backscattering coefficient has been assessed mostly by semi-experimental methodologies or simulations (e.g., Monte Carlo simulations) [4], [5]; however, there are few reports discussing the fully experimental method. Within an experimental methodology that considers a temperaturedependent backscattering coefficient, it has been demonstrated that it is difficult to yield the temperature dependence of the quasi-ballistic parameters as the gate length decreases [6].…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Study of Quasi-Ballistic Transport in High-$\kappa$/Metal Gate nMOSFETs

Sagong

Kang²,

Sohn

et al. 2011

IEEE Electron Device Lett.

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We study quasi-ballistic transport in nanoscale high-κ/metal gate nMOSFETs based on radio-frequency (RF) S-parameter analysis. An RF S-parameter-based simple experimental methodology is used for direct extraction of device parameters (i.e., L ef f , R sd , and C inv ) and the effective carrier velocity v ef f from the targeted short-channel devices. Furthermore, an analytical top-of-the-barrier model, which self-consistently solves the Schrödinger-Poisson equations, is used to determine the ballistic carrier velocity v inj at the top of the barrier near the source. Based on the results of the experimental extraction and analytical calculations, backscattering coefficient r sat and ballistic ratio BR sat are calculated to assess the degree of the transport ballisticity for nMOSFETs. It is found that conventional high-κ/metal gate nMOSFETs will approach a ballistic limit at an effective gate length L ef f of approximately 7 nm.Index Terms-Ballistic transport, carrier velocity, high-κ, radio frequency (RF).

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A New Backscattering Model Giving a Description of the Quasi-Ballistic Transport in Nano-MOSFET

Cited by 51 publications

References 19 publications

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day

Analytical modelling and performance analysis of double-gate MOSFET-based circuit including ballistic/quasi-ballistic effects

Comprehensive Study of Quasi-Ballistic Transport in High-$\kappa$/Metal Gate nMOSFETs

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