A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

Zhu, Shengnan; Liu, Tianshi; Fan, Junchong; Salemi, Arash; White, M.H.; Sheridan, David C.; Agarwal, Anant

doi:10.3390/ma15196690

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…Zhenfeng Peng [11] developed an HJD-MOSFET based on conventional 4H-SiC CON-DTMOSFET, achieving an 𝑅 𝑜𝑛,𝑠𝑝 of 2.6 𝑚Ω • 𝑐𝑚 2 in simulation. Zhu, S et al used dodecagonal cell topology to decrease planar MOSFET on-resistance by 2.2x [12]. H. Yu et al introduced an SP-structure, forming a JBS-MOSFET for better SC quality [13], reaching an onresistance of 2.0 𝑚𝛺 • 𝑐𝑚 2 .…”

Section: Sic Based Mosfetsmentioning

confidence: 99%

Status and prospects of wide bandgap semiconductor devices

Zhang,

Zhang

2023

ACE

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Wide bandgap semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), have attracted significant attention due to their exceptional electronic and thermal properties, making them ideal for high-power and high-frequency applications. This study provides a comprehensive review of SiC and GaN materials and recent developments in power electronics, radio frequency (RF) devices. The study focuses on the unique properties of these materials, which enable them to outperform traditional silicon-based devices in terms of efficiency, power density, and overall performance. The objectives include examining material properties, assessing SiC and GaN-based device performance, comparing electron mobility, on-resistance, and temperature dependence, and identifying areas for future research. The content covers a range of devices, including SiC MOSFETs, IGBTs, GaN HEMTs, and their applications, with a focus on recent advances in material quality and device reliability. The research contribution of the paper lies in its comprehensive analysis, which serves as a valuable reference for researchers, manufacturers, and policymakers working to accelerate the development of advanced materials and technologies. The successful implementation of SiC and GaN-based devices will lead to more energy-efficient systems, enhanced performance across various sectors, and a reduction in global energy consumption and environmental impact, revolutionizing the electronics industry.

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Section: Sic Based Mosfetsmentioning

confidence: 99%

Status and prospects of wide bandgap semiconductor devices

Zhang,

Zhang

2023

ACE

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“…These techniques include self-aligned channel [2,3], self-aligned source contact [4], specific doping on JFET region [5], and current spreading layer [6]. On the design front, cell topology and pitch reduction play vital roles in further improving the performance of VDMOSFETs [7][8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of cell topology effect on SiC VDMOSFETs for high power and frequency applications

Hung,

Hsiao,

Kuo

2024

Eng. Res. Express

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In this paper, we present a comprehensive investigation of the impact of cell topology and pitch reduction on the DC and AC characteristics of 1200V-rated 4H-SiC planar VDMOSFETs. We have designed and fabricated four different cell topologies, namely linear, square, hexagonal, and staggered cell, in order to characterize their performance. Among the various cell types, the hexagonal cell exhibits the most favorable specific on-state resistance (Ron,sp) value. However, it is worth noting that the breakdown values of both the hexagonal and staggered square cells fall significantly below the simulated values. This is attributed to the interaction between the irregular cell boundaries and the edge cell termination region. Furthermore, we observed that the linear cell has the highest gate resistance compared to the other cell types. Additionally, the linear cell also demonstrates a lower input capacitance than the other cells. This can be attributed to its longer gate trasmission line and smaller area. Lastly, we performed dynamic double pulse tests on the fabricated VDMOSFETs to compare their switching characteristics. It was concluded that linear cell VDMOS is suitable for high switching applications, while square, hexagonal and S.S cell VDMOS are better suited for lower switching applications that require a high output current.

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