A new class of doped nanobulk high-figure-of-merit thermoelectrics by scalable bottom-up assembly

Mehta, Rutvik J.; Zhang, Yanliang; Karthik, Chinnathambi; Singh, Baljeet; Siegel, Richard W.; Borca‐Tasciuc, Theodorian; Ramanath, Ganpati

doi:10.1038/nmat3213

Cited by 491 publications

(438 citation statements)

References 30 publications

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“…To this end, no TE material would have achieved its best performance without defects 9. The canonical “phonon‐glass electron‐crystal” strategy is implemented via concertedly engineering point defects, textures, grain boundaries, and nanoinclusions to reduce the κ ph 10, 11, 12, 13, 14, 15, 16, 17 and enhance the PF 18, 19, 20, 21, 22, 23, 24, 25…”

Section: Introductionmentioning

confidence: 99%

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

et al. 2016

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Defects and defect engineering are at the core of many regimes of material research, including the field of thermoelectric study. The 60‐year history of V2VI3 thermoelectric materials is a prime example of how a class of semiconductor material, considered mature several times, can be rejuvenated by better understanding and manipulation of defects. This review aims to provide a systematic account of the underexplored intrinsic point defects in V2VI3 compounds, with regard to (i) their formation and control, and (ii) their interplay with other types of defects towards higher thermoelectric performance. We herein present a convincing case that intrinsic point defects can be actively controlled by extrinsic doping and also via compositional, mechanical, and thermal control at various stages of material synthesis. An up‐to‐date understanding of intrinsic point defects in V2VI3 compounds is summarized in a (χ, r)‐model and applied to elucidating the donor‐like effect. These new insights not only enable more innovative defect engineering in other thermoelectric materials but also, in a broad context, contribute to rational defect design in advanced functional materials at large.

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Section: Introductionmentioning

confidence: 99%

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

et al. 2016

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“…[11][12][13][14][15][16] For example, Bi2Te3 based TE modules have been successfully commercialized with a ZT of around 1. [17] More recently, the ZT values of conventional thermoelectric materials have been significantly improved to new records in the laboratory through nanotechnology, chemical doping, and engineering of electronic structure.…”

Section: Introductionmentioning

confidence: 99%

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Han

et al. 2015

Nano Energy

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, S. Xue. (2015). Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures. Nano Energy, Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures AbstractA robust low-cost ambient aqueous method for the scalable synthesis of surfactant-free nanostructured metal chalcogenides (MaXb, M=Cu, Ag, Sn, Pb, and Bi; X=S, Se, and Te; a=1 or 2; and b=1 or 3) is developed in this work. The effects of reaction parameters, such as precursor concentration, ratio of precursors, and amount of reducing agent, on the composition, size, and shape of the resultant nanostructures have been comprehensively investigated. This environmentally friendly approach is capable of producing metal chalcogenide nanostructures in a one-pot reaction on a large scale, which were investigated for their thermoelectric properties towards conversion of waste heat into electricity. The results demonstrate that the thermoelectric properties of these metal chalcogenide nanostructures are strongly dependent on the types of metal chalcogenides, and their figure of merits are comparable with previously reported figures for their bulk or nanostructured counterparts.

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“…1 Recently, reversible phase switching from a crystalline to an amorphous phase induced by temperature or electric field 2,3 was reported. Because the phase change is accompanied by a large resistance change, such materials are considered candidates for future nonvolatile memory applications.…”

Section: Introductionmentioning

confidence: 99%

Lattice dynamics in Bi2Te3and Sb2Te
Bessas
¹
,
Sergueev
²
,
Wille
³

et al. 2012
Phys. Rev. B

121

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The lattice dynamics in Bi 2 Te 3 and Sb 2 Te 3 were investigated both microscopically and macroscopically using 121 Sb and 125 Te nuclear inelastic scattering, x-ray diffraction, and heat capacity measurements. In combination with earlier inelastic neutron scattering data, the element-specific density of phonon states was obtained for both compounds and phonon polarization analysis was carried out for Bi 2 Te 3 . A prominent peak in the Te specific density of phonon states at 13 meV, that involves mainly in-plane vibrations, is mostly unaffected upon substitution of Sb with Bi revealing vibrations with essentially Te character. A significant softening is observed for the density of vibrational states of Bi with respect to Sb, consistently with the mass homology relation in the long-wavelength limit. In order to explain the energy mismatch in the optical phonon region, a ∼20% force constant softening of the Sb-Te bond with respect to the Bi-Te bond is required. The reduced average speed of sound at 20 K in Bi 2 Te 3 , 1.75(1) km/s, compared to Sb 2 Te 3 , 1.85(4) km/s, is not only related to the larger mass density but also to a larger Debye level. The observed low lattice thermal conductivity at 295 K, 2.4 Wm −1 K −1 for Sb 2 Te 3 and 1.6 Wm −1 K −1 for Bi 2 Te 3 , cannot be explained by anharmonicity alone given the rather modest Grüneisen parameters, 1.7(1) for Sb 2 Te 3 and 1.5(1) for Bi 2 Te 3 , without accounting for the reduced speed of sound and more importantly the low acoustic cutoff energy.

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A new class of doped nanobulk high-figure-of-merit thermoelectrics by scalable bottom-up assembly

Cited by 491 publications

References 30 publications

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Lattice dynamics in Bi2Te3and Sb2Te
Bessas
¹
,
Sergueev
²
,
Wille
³

et al. 2012
Phys. Rev. B

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A new class of doped nanobulk high-figure-of-merit thermoelectrics by scalable bottom-up assembly

Cited by 491 publications

References 30 publications

New Insights into Intrinsic Point Defects in V2VI3 Thermoelectric Materials

New Insights into Intrinsic Point Defects in V2VI3 Thermoelectric Materials

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Lattice dynamics in Bi2Te3and Sb2TeBessas1, Sergueev2, Wille3 et al. 2012Phys. Rev. B

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New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

Lattice dynamics in Bi2Te3and Sb2Te
Bessas
¹
,
Sergueev
²
,
Wille
³

et al. 2012
Phys. Rev. B