A New Design of a Microstrip Microwave Power Amplifier for PCS BAND

Rachakh, Amine; Abdellaoui, Larbi El; Mandry, Rachid; Errkik, Ahmed; Tajmouati, Abdelali; Latrach, Mohamed

doi:10.1145/3167486.3167489

Cited by 3 publications

(1 citation statement)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, GaAs FET technology has low cost and high performances. Therefore, GaAs FET PA design for next-generation communication systems, such as LTE and mobile world-wide interoperability for microwave access (WiMAX), even in the microwave band becomes a highly interesting topic for many circuit designers [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

A Two-stages Microstrip Power Amplifier for WiMAX Applications

et al. 2018

Self Cite

View full text Add to dashboard Cite

Amplification is one of the most basic and prevalent microwave analog circuit functions. Wherefore power amplifiers are the most important parts of electronic circuits. This is why the designing of power amplifiers is crucial in analog circuit designing. The intent of this work is to present an analysis and design of a microwave broadband power amplifier by using two stages topology. A two stages power amplifier using a distributed matching network for WiMAX applications is based on ATF-21170 (GaAs FET). The configuration aims to achieve high power gain amplifier with low return loss over a broad bandwidth. The proposed BPA is designed with a planar structure on an epoxy (FR4) substrate. The planar structure is also utilized for getting the good matching condition. The advanced design system (ADS) software is used for design, simulation, and optimization the proposed amplifier. The complete amplifier achieves an excellent power gain; is changed between 28.5 and 20 dB with an output power of 12.45dBm at 1dB compression point. For the input reflection coefficient ( S11) is varied between -20 and -42 dB. While the output reflection coefficient (S22) is varied between -10 dB and -49 dB over the wide frequency band of 3.2-3.8 GHz.

show abstract

Section: Introductionmentioning

confidence: 99%

A Two-stages Microstrip Power Amplifier for WiMAX Applications

et al. 2018

Self Cite

View full text Add to dashboard Cite

show abstract

GaAs FET Broadband Power Amplifier for L and S Bands Applications

Ribate

Mandry

Latrach

et al. 2017

Proceedings of the 2nd International Conference on Computing and Wireless Communication Systems

View full text Add to dashboard Cite

Design and Analysis of a New Configuration of Microwave Power Amplifier

Rachakh

Abdellaoui

Latrach

2019

Advances in Computer and Electrical Engineering

View full text Add to dashboard Cite

The chapter has the objective of introducing and explaining the concept of a microwave power amplifier (PA). PA is one of the blocks that has a large effect on the overall performance of communication systems, especially in transmitter systems, and their design is decided by the parameters of the transistor selected. This chapter is divided into three parts, which will be as follows: Part 1 provides background theory relevant to our research. Part 2 describes the matching techniques for PAs. Part 3 utilizes the tools developed in Parts 1 and 2 to analyze and design the proposed microwave power amplifier with a microstrip technology intended for wireless applications.

show abstract

A New Design of a Microstrip Microwave Power Amplifier for PCS BAND

Cited by 3 publications

References 16 publications

A Two-stages Microstrip Power Amplifier for WiMAX Applications

A Two-stages Microstrip Power Amplifier for WiMAX Applications

GaAs FET Broadband Power Amplifier for L and S Bands Applications

Design and Analysis of a New Configuration of Microwave Power Amplifier

Contact Info

Product

Resources

About