A new device for smart power integrated circuits - the trench lateral DMOSFET

A low specific on-resistance power trench MOSFET with a buried-interface-drain

“…Power MOSFETs with a trench-based technology have been shown to reduce R on,sp because of the reduced cell pitch [1,2]. Fujishima and Salama investigated a trench lateral power MOSFET (TLPM) with a trench bottom drain contact with the simulated performances of V B = 80V and R on,sp = 0.8 mX cm 2 [3].…”