In this paper, a counter-doped junction termination extension (CD-JTE) structure was experimentally implemented and studied. Two groups of 4H-SiC PiN diodes were fabricated with two n-type drift layer thicknesses of 11 μm and 30 μm respectively, and with different termination structures, in order to demonstrate the wide JTE dose tolerance of CD-JTE. Three different doses, 1.7×10 13 cm -2 , 2.2×10 13 cm -2 , and 2.8×10 13 cm -2 , were used for the critical JTE implantation. The measured breakdown voltages (BV) of the diodes with all termination structures and JTE doses were compared with simulation predictions. Electroluminescence (EL) at the breakdown voltage was recorded and used to locate the peak electrical field. The test results matched well with simulation. As a result of the effectiveness and robustness of the CD-JTE, the best achieved BVs from the diodes on the 11 μm and 30 μm epi-layers were 1850 V and 4800 V, respectively.