A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Tempera-ture Dependent Foster (RC) Thermal Network

Abstract

Thermal loading of MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor) model is a very important factor for the reliability of power electronics systems. Thus, the junction temperature must be accurately estimated. This paper presents a new electro-thermal (ET) model for low voltage Power MOSFET rated at (30 V/13 A) by PSpice simulator to estimate junction temperature (Tj) and power loss. The (ET) model is composed of electrical network model and (RC) thermal network model. The parameters of the (RC) thermal network model are extracted from datasheet using genetic algorithms (GA) method for computation of the transient thermal impedance (Zth(j-c)). The propose model reflects superior performance in terms of flexibility and accuracy. The results obtained indicate a good matching between proposed model and manufacturer's data.

PSpice Implementation and Simulation of a New Electro-Thermal Modeling for Estimating the Junction Temperature of Low Voltage Power MOSFET

“…The diagram of the electro-thermal (ET) simulation Transfer characteristics comparison between the simulation results and datasheet at different temperatures[7] …”

“…I-V output characteristics comparison between the simulation results and datasheet for various Vgs values at T 25 °C[7] …”