A new evaluation method for rf characteristics of varactor diodes

Imaoka, Toshikazu

doi:10.1002/mop.4650030113

Micro & Optical Tech Letters

1990

DOI: 10.1002/mop.4650030113

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A new evaluation method for rf characteristics of varactor diodes

Toshikazu Imaoka

Abstract: A new evaluation method used for RF characteristics of varactor diodes has been developed using an S‐parameter measurement technique for packaged MESFETs and their simulation. This method can measure accurately the characteristics under any given frequency and any bias conditions.

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1993

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A coaxial test fixture for characterizing low‐impedance microwave two‐terminal devices

Monahan

Morris

Steer

1993

Micro & Optical Tech Letters

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A technique using a coaxial diode test fixture for the mount‐independent characterization of potentially unstable two‐terminal devices is presented. A standard three‐terminal calibration procedure using reference packages is used to calibrate to the surface of the packaged device. The test fixture is designed to present a low, nonresonant impedance to the device so that measurement resolution is enhanced. The characterization of an IMPATT diode is presented as an example. © 1993 John Wiley & sons, Inc.

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A coaxial test fixture for characterizing low‐impedance microwave two‐terminal devices

Monahan

Morris

Steer

1993

Micro & Optical Tech Letters

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show abstract

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A new evaluation method for rf characteristics of varactor diodes

Abstract: A new evaluation method used for RF characteristics of varactor diodes has been developed using an S‐parameter measurement technique for packaged MESFETs and their simulation. This method can measure accurately the characteristics under any given frequency and any bias conditions.

Cited by 1 publication

References 1 publication

A coaxial test fixture for characterizing low‐impedance microwave two‐terminal devices

A coaxial test fixture for characterizing low‐impedance microwave two‐terminal devices

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