A New Experimental Method to Obtain the Ion Beam Profile of Focused Ion Beam Nanotechnology Systems

Anguita, José V.; Álvaro, Raquel; Espinosa, Francisco

doi:10.11159/ijmem.2012.007

Cited by 2 publications

(2 citation statements)

References 8 publications

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“…Beam profile estimation by analyzing milled grating profile has been suggested by Anguita et al [30]. However, the method is able to evaluate only peripheral beam wings and does not give information regarding the core region.…”

Section: Exponential Ion Distribution Around the Corementioning

confidence: 99%

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Nano-proximity direct ion beam writing

Seniutinas

Gervinskas

Anguita³

et al. 2016

Nanofabrication

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Nanofabrication 2015; 2: 54-62 the required resolution and footprint of structures these two techniques can be complemented making pattern over-lays [1]. However, both EBL and photolithography have limitations due to several processing steps of resist exposure, etching, metallization required to make a final device. These limitations were overcome with an emergence of focused ion beam lithography (IBL) which enables direct 3D writing. Even though focused ion beam (FIB) milling technology was first demonstrated in the mid-1970s [2,3], it is still mainly used for sample slicing and lamella preparation for transmission electron microscopy.Among several reasons, lack of stable ion sources has hindered FIB applications in high resolution large scale fabrication, especially where He ion sources are implemented. Nonetheless novel ion sources and column geometries providing high temporal beam stability have been developed over the last decade and opened new avenues for the direct writing at the nanoscale. Stateof-the-art ion beam lithography tools are capable of patterning relatively large areas with cross sections of 100 × 100 μm 2 in tens of minutes [4] depending on complexity and are comparable in speed with mature EBL which is producing 22-nm node lithography masks for the latest microelectronics industry at a throughput ̴ 5 × 10 5 μm 2 h -1 [5]. High precision direct IBL writing found its way in application fields of photonic crystals [6], single molecule sensors [7], nanopores for DNA probing [8,9] to mention a few. Recent development of new Au, Si, Ge ion sources allows not only milling but also a controlled implantation useful for other nanoscale etching and material growth techniques [10][11][12].In plasmonics and nano-photonics, IBL is often used for fabrication/reshaping of nanoscale antennas for the light field confinement and enhancement [13,14] as well as for milling metasurfaces into metal layers [15,16]. Material properties are altered by projectile ion implantation (usually Ga + ) around the cuts and this dampens plasmonic or optical resonances of the fabricated structures. With Abstract: Focused ion beam (FIB) milling with a 10 nm resolution is used to directly write metallic metasurfaces and micro-optical elements capable to create structured light fields. Surface density of fabricated nano-features, their edge steepness as well as ion implantation extension around the cut line depend on the ion beam intensity profile. The FIB beam intensity cross section was evaluated using atomic force microscopy (AFM) scans of milled line arrays on a thin Pt film. Approximation of two Gaussian intensity distributions describes the actual beam profile composed of central high intensity part and peripheral wings. FIB fabrication reaching aspect ratio of 10 in gold film is demonstrated.

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Section: Exponential Ion Distribution Around the Corementioning

confidence: 99%

“…The presence of wings is then observed due to cumulative dose in the overlapped regions. The axial ion beam current distribution is then retrieved according to [30]:…”

Section: Exponential Ion Distribution Around the Corementioning

confidence: 99%

Nano-proximity direct ion beam writing

Seniutinas

Gervinskas

Anguita³

et al. 2016

Nanofabrication

View full text Add to dashboard Cite

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Ion beam profiling from the interaction with a freestanding 2D layer

Shorubalko¹,

Choi²,

Stiefel³

et al. 2017

Beilstein J. Nanotechnol.

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Recent years have seen a great potential of the focused ion beam (FIB) technology for the nanometer-scale patterning of a freestanding two-dimensional (2D) layer. Experimentally determined sputtering yields of the perforation process can be quantitatively explained using the binary collision theory. The main peculiarity of the interaction between the ion beams and the suspended 2D material lies in the absence of collision cascades, featured by no interaction volume. Thus, the patterning resolution is directly set by the beam diameters. Here, we demonstrate pattern resolution beyond the beam size and precise profiling of the focused ion beams. We find out that FIB exposure time of individual pixels can influence the resultant pore diameter. In return, the pore dimension as a function of the exposure dose brings out the ion beam profiles. Using this method of determining an ion-beam point spread function, we verify a Gaussian profile of focused gallium ion beams. Graphene sputtering yield is extracted from the normalization of the measured Gaussian profiles, given a total beam current. Interestingly, profiling of unbeknown helium ion beams in this way results in asymmetry of the profile. Even triangular beam shapes are observed at certain helium FIB conditions, possibly attributable to the trimer nature of the beam source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does.

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A New Experimental Method to Obtain the Ion Beam Profile of Focused Ion Beam Nanotechnology Systems

Abstract: -

Cited by 2 publications

References 8 publications

Nano-proximity direct ion beam writing

Nano-proximity direct ion beam writing

Ion beam profiling from the interaction with a freestanding 2D layer

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