A new extraction method for the two-parameter FET temperature noise model

Garcı́a, M.; Stenarson, J.; Yhland, K.; Zirath, Herbert; Angelov, I.

doi:10.1109/22.734558

Cited by 15 publications

(8 citation statements)

References 10 publications

(17 reference statements)

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“…Figure 13 shows the noise temperatures are presented as a function of drain current for commercially available lownoise GaAs PHEMT (NEC NE32500). 15 The results show that T g equals the ambient temperature in the lower drain current ranges, and T d increase with the increase of drain current. Figure 14 shows the plots of PRC noise model parameters versus drain current based on wafer measurement for low-noise GaAs PHEMT.…”

Section: Noise Modelmentioning

confidence: 87%

Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling

Shen¹,

Chen²,

Sun³

et al. 2015

j comput theor nanosci

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The small signal equivalent circuit model and noise model for high electron mobility transistors (HEMT) are introduced in this paper. The corresponding model parameter extraction methods are also discussed. Three most common used measurement techniques including S-parameter, noise parameter and harmonic performance are described. The signal and noise de-embedding methods for microwave components and circuits in on wafer and coaxial measurement systems are discussed more detail.

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Section: Noise Modelmentioning

confidence: 87%

Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling

Shen¹,

Chen²,

Sun³

et al. 2015

j comput theor nanosci

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“…This model can be used for simulating the frequency dependence of the noise parameters [4]. Sometimes, a two or even three-parameter temperature noise model can be used [5]. The physical temperatures of the drain, gate and the gate-to-source resistances are raised in order to increase their noise power contribution in these models.…”

Section: Noise Modellingmentioning

confidence: 99%

Integrated Amplifier Circuits for 60 GHz Broadband Telecommunication

Kärkkäinen¹,

Varonen²,

Kangaslahti³

et al. 2004

Analog Integr Circ Sig Process

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Wide frequency bandwidth has been internationally allocated for unlicensed operation around the oxygen absorption frequency at 60 GHz. A power amplifier and a low noise amplifier are presented as building blocks for a T/R-unit at this frequency. The fabrication technology was a commercially available 0.15 µm gallium arsenide (GaAs) process featuring pseudomorphic high electron mobility transistors (PHEMT). Using on-wafer tests, we measured a gain of 13.4 dB and a +17 dBm output compression point for the power amplifier at 60 GHz centre frequency when the MMIC was biased to 3 volts V dd . At the same frequency, the low noise amplifier exhibited 24 dB of gain with a 3.5 dB noise figure. The AM/AM and AM/PM characteristics of the power amplifier chip were obtained from the large-signal S-parameter measurement data. Furthermore, the power amplifier was assembled in a split block package, which had a WR-15 waveguide interface in input and output. The measured results show a 12.5 dB small-signal gain and better than 8 dB return losses in input and output for the packaged power amplifier.

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“…DC and S-parameter of many GaAs and InP transistors were measured on wafer both at room temperature and cryogenic temperature. From these measurements we could extract the noise models [6][7][8][9][10][11][12][13][14] which were later used at cryogenic temperatures for the amplifier design. At low temperature the transconductance of both InP and GaAs transistors increase, Figs.…”

Section: Device Modelingmentioning

confidence: 99%

On the performance of low-noise low-DC-power-consumption cryogenic amplifiers

Angelov

Wadefalk

Stenarson

et al. 2002

IEEE Trans. Microwave Theory Techn.

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The performance of broadband, Low-Noise, Low DC consumption cryogenic amplifiers was studied in detail with emphasis to minimize the power consumption and optimize the amplifier performance at cryogenic temperature. A general approach used in the modeling and amplifier design can help to minimize the power consumption and optimize the performance of the amplifier. A noise temperature below 6K and 25 dB gain was experimentally obtained in the frequency range 4-8 GHz with total power consumption of 4 mW with commercial GaAs transistor.

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A new extraction method for the two-parameter FET temperature noise model

Cited by 15 publications

References 10 publications

Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling

Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling

Integrated Amplifier Circuits for 60 GHz Broadband Telecommunication

On the performance of low-noise low-DC-power-consumption cryogenic amplifiers

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