2002
DOI: 10.1088/0960-1317/12/5/312
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A new fabrication process for ultra-thick microfluidic microstructures utilizing SU-8 photoresist

Abstract: In this paper we describe a new process for fabricating ultra-thick microfluidic devices utilizing SU-8 50 negative photoresist (PR) by standard UV lithography. Instead of using a conventional spin coater, a simple 'constant-volume-injection' method is used to create a thick SU-8 PR film up to 1.5 mm with a single coating. The SU-8 PR is self-planarized during the modified soft-baking process and forms a highly-uniform surface without any edge bead effect, which commonly occurs while using a spin coater. Photo… Show more

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Cited by 273 publications
(187 citation statements)
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“…The thickness of 1000 µm is sufficient for the filter applications. The sidewall angle in these experiments is controlled within 90 ± 0.1 • , which is a significant improvement compared with those reported so far [8,17]. This high quality fabrication result is an important characteristic for a quality coaxial transmission line.…”
Section: Su-8 Microfabrication Processmentioning
confidence: 48%
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“…The thickness of 1000 µm is sufficient for the filter applications. The sidewall angle in these experiments is controlled within 90 ± 0.1 • , which is a significant improvement compared with those reported so far [8,17]. This high quality fabrication result is an important characteristic for a quality coaxial transmission line.…”
Section: Su-8 Microfabrication Processmentioning
confidence: 48%
“…Figure 6 shows an SU-8 layer with a smooth and vertical finish on the edge, which is important to the quality of filtering. The highest aspect ratio presented in [8] is 15:1. The aspect ratio achieved by using the optimized process, however, has been much increased.…”
Section: Su-8 Microfabrication Processmentioning
confidence: 96%
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“…Baking steps are really crucial in order to reduce the internal stress in the final film. 19 After soft baking the SU-8 on the hot plate, a chrome coated glass mask with rectangular features (12 Â 9 lm) was used to transfer the patterns into the SU-8 photoresist. The pitch size (i.e., distance between mask features in x and y-directions) was 4 lm and 2 lm in x and y-directions, respectively (see Fig.…”
Section: Methodsmentioning
confidence: 99%