The 2002 45th Midwest Symposium on Circuits and Systems, 2002. MWSCAS-2002.
DOI: 10.1109/mwscas.2002.1187164
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A new family of low-voltage circuits based on quasi-floating gate transistors

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Cited by 19 publications
(15 citation statements)
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“…Consequently, the effective resistance can be tuned from hundreds of kilo-ohms to the range of Gigaohms, while a capacitor of a few picofarads is enough to obtain cutoff frequencies in the order of hertz. Three transistors are necessary to avoid direct polarization of the parasitic active-substrate diodes due to signal fluctuations between the terminals of R g , increasing the dynamic range [9,10]. In addition, the weak-inversion operation of transistors M p2 forces R g <<R B (where R B is the diffusion resistance), in order to avoid a parasitic resistive divider [11].…”
Section: Quasi-ideal Integrator Designmentioning
confidence: 99%
“…Consequently, the effective resistance can be tuned from hundreds of kilo-ohms to the range of Gigaohms, while a capacitor of a few picofarads is enough to obtain cutoff frequencies in the order of hertz. Three transistors are necessary to avoid direct polarization of the parasitic active-substrate diodes due to signal fluctuations between the terminals of R g , increasing the dynamic range [9,10]. In addition, the weak-inversion operation of transistors M p2 forces R g <<R B (where R B is the diffusion resistance), in order to avoid a parasitic resistive divider [11].…”
Section: Quasi-ideal Integrator Designmentioning
confidence: 99%
“…The input circuit with a single QIR, as shown in Fig. 3(b), is the simplest connection, and with a GD-QIR structure, was used in [16]. Connecting the substrate diode in such a single-QIR structure to bias voltage V B eliminates dc offset.…”
Section: Settling Time Of Qfg Circuitsmentioning
confidence: 99%
“…Recently, several authors have presented techniques using so-called quasi-or pseudo-floating gates (QFGs) as a way to deal with the initial-charge problem [14][15][16][17][18]. A QFG transistor is implemented by providing a weak electric connection between a QFG node and a bias voltage source using a very large or quasi-infinite resistor (QIR).…”
Section: Introductionmentioning
confidence: 99%
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“…At a device level, the exploitation of MOS operating regions scarcely employed in the past, such as weak or moderate inversion, has been investigated (e.g., [3]). Different ways of driving MOS transistors have been devised, directly to the body terminal [6] or by capacitive coupling to a floating [7,8] or quasi-floating [9,14] gate.…”
mentioning
confidence: 99%