A New Family of Positive Electron Beam Resists—Poly(Olefin Sulfones)

Thompson, L. F.; Bowden, M. J.

doi:10.1149/1.2403352

Cited by 85 publications

(25 citation statements)

References 2 publications

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“…Many recent papers have indicated laser irradiation as an interesting technique for the recovery of radiation damage in implanted layers (1)(2)(3)(4)(5)(6)(7)(8). It was also observed by some authors (6-8) that dopant concentrations in excess of the solid solubility values can be dissolved in silicon by these techniques.…”

Section: Electrical Properties and Stability Of Supersaturatedmentioning

confidence: 99%

“…This increase in solubility is achieved by one of two mechanisms, viz., simple chain scission of individual bonds in the main chain (1,2) or decomposition of a dissolution inhibitor (3,4). This increase in solubility is achieved by one of two mechanisms, viz., simple chain scission of individual bonds in the main chain (1,2) or decomposition of a dissolution inhibitor (3,4).…”

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confidence: 99%

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A Sensitive Novolac‐Based Positive Electron Resist

Bowden¹,

Thompson²,

Fahrenholtz³

et al. 1981

J. Electrochem. Soc.

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A positive electron resist has been developed which appears to operate on a different mechanism from conventional positive electron resists. Resists in the latter category such as PBS or PMMA achieve differential solubility primarily as a result of scission of the main chain. In the case of the new resist, differential solubility appears to be achieved by the removal of a polymeric dissolution inhibitor. The resist is a composite system consisting of a novolac resin similar to that used in most positive photoresists in solid solution with poly(2-methyl-l-pentene sulfone) which functions as a dissolution inhibitor of the novolac resin in aqueous base. The process operates by spontaneous depolymerization of the polymeric dissolution inhibitor, a process which is initiated by electron irradiation. The sensitivity of this resist (called NPR) is 3 #C cm -2 at 20 kV and the contrast is 1.0. Submicron features have been delineated in 1.0 #m resist films. The resist withstands A1, poly-Si, SIO2, doped SiO~, and SixNu plasma etching environments and has been used as a plasma etch mask to transfer submicron features into these film substrates.

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Section: Electrical Properties and Stability Of Supersaturatedmentioning

confidence: 99%

mentioning

confidence: 99%

A Sensitive Novolac‐Based Positive Electron Resist

Bowden¹,

Thompson²,

Fahrenholtz³

et al. 1981

J. Electrochem. Soc.

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“…PMMA is an example of a commonly used, low sensitivity, high resolution, E-beam resist routinely capable ofsub-0.25 pm lithography. (1) Other e-beam sensitive resists such as PBS (2) and EBR-9 (3) offer dramatically improved sensitivity. However, when compared to PMMA, PBS has lower resolution.…”

Section: Introductionmentioning

confidence: 99%

<title>Development of two new positive DUV photoresists for use with direct-write e-beam lithography</title>

et al. 1996

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Two new positive tone, chemically amplified, DUV resists from Shipley, XP-9525 and XP-9549Q (UV III) have been investigated for use as direct write e-beam resists. Both of these materials have shown extremely high resolution capabilities while maintaining excellent sensitivity to e-beam exposure. Sub-0.20 im line and space gratings were resolved in UV III, and 0.10 im gratings were resolved in XP-9525. A formal design of experiment was created and used as a framework to develop a process for UV III which would optimize several resultant responses including: exposure latitude, edge roughness, and sensitivity. This paper will discuss the process development of these resists, and detail their performance characteristics. Effects relating to post-exposure bake delay will also be considered due to the susceptibility of many chemically amplified resists to airborne contaminants. UV III exhibited much greater stability than XP-9525, and was able to maintain precise linewidth control after 4 hours of delay, making it acceptable for use in a normal process environment. In contrast, XP-9525 exhibited severe T-topping after post-exposure bake delays of only 15 minutes, a condition which can only be solved using additional processing steps and/or environmental controls.KEY WORDS: chemically amplified, deep UV lithography, direct-write, e-beam lithography, photoresist, UV 111, XP-9525, XP-9549 INTRODUCTIONModern e-beam lithography systems are capable of generating sub-0.25 im lines with a high level of pattern placement accuracy and linewidth control. To take advantage of their capabilities, an optimized photoresist process capable of high resolution must be used. In addition to resolution, direct write e-beam lithography ideally requires a resist which is etch resistant, and has enough sensitivity to allow for a high throughput.Typically, the highest resolution photoresists are extremely slow, requiring a high dose to attain full exposure. This greatly limits the throughput of e-beam systems, and relegates their usefulness mainly to single-device, R&D applications. PMMA is an example of a commonly used, low sensitivity, high resolution, E-beam resist routinely capable ofsub-0.25 pm lithography. (1) Other e-beam sensitive resists such as PBS (2) and EBR-9 (3) offer dramatically improved sensitivity. However, when compared to PMMA, PBS has lower resolution. Neither resist offers the level of plasma etch resistance which is critical for many wafer etch processes. As a result, they are more suitable for applications demanding high throughput such as 5xreticle generation.Presently, very little emphasis is being placed on the development of resists designed strictly for e-beam use because of its low volume relative to optical lithography. Resist manufacturers are currently working to develop resists for deep ultraviolet (DUV-248 and 193 nm) lithography, a technology expected to be the predominant lithography technique during the next decade. In addition, since these resists are designed for wafer processing applications, they are ...

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“…The Beilcore group has for some time been investigating lithographic applications of poly(alkenyltrimethylsilane sulfone)s.4 Although one of them, poly (3-butenyltrimethylsilane sulfone) (PBTMSS), has already found several unique applications in nanolithography,5 its development and plasma processing windows are narrow. 3 The Tohoku/Chisso group, on the other hand, has long been interested in the copolymerization of styrene derivatives with sulfur dioxide. 6 Recently, variable-composition copolymers of several siliconsubstituted styrenes, such as p-trimethylsilylstyrene (1) and p-pentamethyldisilylstyrene (2), with sulfur dioxide have been synthesized.7 In contrast to the intractable 1:1 poly(styrene sulfone)8, both 1:1 polysulfones of 1 and 2, further called P1S and P25, were found to be soluble in a variety of solvents.…”

Section: Introductionmentioning

confidence: 99%

<title>Evaluation of poly(p-trimethylsilylstyrene and p-pentamethyldisilylstyrene sulfone)s as high-resolution electron-beam resists</title>

Gozdz

Ono

Ito

et al. 1991

Advances in Resist Technology and Processing VIII

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Soluble 1:1 alternating copolymers of p-trimethylsilylstyrene (1) and p-pentamethyldisilylstyrene (2) with sulfur dioxide have been synthesized by free-radical copolymerization at T < -50°C. Both copolymers had very high molecular weights and exhibited good film-forming properties. Their thermal stability in nitrogen (5 % wt loss) was ca. 210-230°C. The etch rate under 02 RIE conditions (15 mTorr 02, -400 V) was 3.4 and 2.5 nm/mm, and their electron beam sensitivity was 3 and 6 iC/cm2 at 20 and 50 kV, respectively, using a 40/60 v/v toluene/2-propanol solution as the developer. 200-nm-pitch gratings for advanced optoelectronic devices were fabricated in various planarizing materials and InP using poly(l sulfone) (P1S) as a top imaging layer.

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A New Family of Positive Electron Beam Resists—Poly(Olefin Sulfones)

Cited by 85 publications

References 2 publications

A Sensitive Novolac‐Based Positive Electron Resist

A Sensitive Novolac‐Based Positive Electron Resist

<title>Development of two new positive DUV photoresists for use with direct-write e-beam lithography</title>

<title>Evaluation of poly(p-trimethylsilylstyrene and p-pentamethyldisilylstyrene sulfone)s as high-resolution electron-beam resists</title>

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