A new floating active inductor using resistive Feedback Technique

Lai, Qiang-Tao; Mao, Jun‐Fa

doi:10.1109/mwsym.2010.5517785

Cited by 17 publications

(6 citation statements)

References 5 publications

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“…Several techniques have been proposed in the literature describing active inductors instead of passive spiral inductors for different applications such as voltage-controlled oscillators, tunable filters, and LNAs. [22][23][24][25][26] Existing approaches to design active inductor circuits are generally divided to grounded and floating techniques. [22][23][24][25][26] In Branchi et al, 22 a high-quality factor floating active inductor, suitable for RF and microwave applications, based on two cascaded pairs of highly linear capacitance gyrators, which provide a symmetric and reciprocal structure, is proposed.…”

Section: Inverter Cell With Active Floating Inductormentioning

confidence: 99%

“…[22][23][24][25][26] Existing approaches to design active inductor circuits are generally divided to grounded and floating techniques. [22][23][24][25][26] In Branchi et al, 22 a high-quality factor floating active inductor, suitable for RF and microwave applications, based on two cascaded pairs of highly linear capacitance gyrators, which provide a symmetric and reciprocal structure, is proposed. In Minaei et al, 27 a gyrator approach is used to design a floating active inductor in the range of 6 to 284 nH.…”

Section: Inverter Cell With Active Floating Inductormentioning

confidence: 99%

“…When a 2-port floating inductor is needed, the grounded node is floated by an additional current source, causing not having symmetric structure and showing some percent of deviations from the behavior of an ideal inductor. 25,26 In this work, a symmetric 2-port floating active inductor based on the structure reported in Lai and Mao 26 is utilized. The circuit schematic of this structure, as well as its equivalent small-signal model, is shown in Figure 2.…”

Section: Inverter Cell With Active Floating Inductormentioning

confidence: 99%

“…In Figure 2A, M L3 , M L4 , M L5 , and M L6 transistors are biased as a common source topology for operating as a current source, M L1 and M L2 devices realize a cross-coupled pair for producing inductance impedance, and R FL resistor is used for increasing the value of inductance as well as its quality factor. 26 In Figure 2B, g f is the conductance of feedback resistor R FL and C 1 , g 1 , C 2 , and g 2 are the effective parasitic capacitance and conductance at nodes V 1 and V 2 . By doing some calculations and as discussed in Lai and Mao, 26 the input admittance of the active inductor shown in Figure 2A is obtained as…”

Section: Inverter Cell With Active Floating Inductormentioning

confidence: 99%

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A 0.3–5 GHz, low‐power, area‐efficient, high dynamic range variable gain low‐noise amplifier based on tunable active floating inductor technique

Soleymani

Amiri

Maghami

2021

Circuit Theory & Apps

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An area-efficient low-noise amplifier with extensive voltage gain variation in the frequency range of 0.3 to 5 GHz is proposed. The designed amplifier comprises of two stages of inverter cells, where by utilizing a resistance shunt feedback, the first stage makes the appropriate voltage gain and input impedance matching, and the second stage increases the bandwidth of the circuit utilizing an active floating inductor. Self-forward-body-bias structure is employed in the presented work for reducing power consumption and improving the overall circuit performance. High voltage gain, low power consumption, wide frequency range of operation, lack of physical inductor, and consequently small occupied active area are among the most important features of the proposed circuit. The presented amplifier has been designed and simulated in standard 90-nm and 0.18-μm technologies with 0.9-and 1.2-V supply voltages, respectively, in which important specifications are reported for 90-nm complementary metal-oxide semiconductor (CMOS) process in details. Power consumption of the designed amplifier is 8.8 mW in 90-nm technology with a flat variable voltage gain of À22 to 21.2 dB. The circuit consumes silicon area of 122 Â 112 μm 2 , and in the high-gain mode, the simulated S 11 parameter is less than À10 dB, noise figure is almost 3.2 dB, and the IIP3 is equal to À4 dBm.

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Section: Inverter Cell With Active Floating Inductormentioning

confidence: 99%

Section: Inverter Cell With Active Floating Inductormentioning

confidence: 99%

Section: Inverter Cell With Active Floating Inductormentioning

confidence: 99%

Section: Inverter Cell With Active Floating Inductormentioning

confidence: 99%

See 2 more Smart Citations

A 0.3–5 GHz, low‐power, area‐efficient, high dynamic range variable gain low‐noise amplifier based on tunable active floating inductor technique

Soleymani

Amiri

Maghami

2021

Circuit Theory & Apps

View full text Add to dashboard Cite

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“…They facilitate easy tuning of inductance with high quality factor and they also occupy less area when compared to spiral inductors [11]. The most commonly used active inductor structure is Gyrator C active inductor the schematic of which is given in Fig 2. The use of active inductors in multi standard receivers is proposed in [12] which uses digital band selector for tuning.…”

Section: Active Inductorsmentioning

confidence: 99%

A 1.7 2.5 GHz Active Inductor based Low Power Low Noise Amplifier for Multi Standard Applications

Vaithianathan¹,

Raja²,

Srinivasan³

2012

IJCA

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Due to an increasing demand for simultaneous global roaming and all-in-one wireless phones, the interest in the development of the multi-standard transceivers has been increased. In the receiver front end, the performance of Low Noise Amplifier (LNA) decides overall receiver sensitivity and hence its design plays a crucial role. In this paper, an active inductor based tunable two-stage LNA employing current reuse technique is proposed for multistandard applications. The LNA is aimed at supporting CDMA-2000, GSM, WCDMA, WiMAX, Bluetooth and UMTS-TDD in the bandwidth range of 1.7 -2.5 GHz. The proposed LNA achieved a power gain of greater than 13 dB, noise figure less than 2 dB and impedance matching less than -8 dB for all the standards. The stability factor is maintained above 1, ensuring stable operation of the LNA without oscillations. The LNA consumes very low power of 7.96 mW at an operating voltage of 1V. The performance analysis of the proposed active inductor based tunable LNA is carried out using Agilent"s ADS simulator employing 90 nm CMOS technology. General TermsRF Circuit Design, Full Custom VLSI Design

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RF and microwave high‐Q floating active inductor design and implementation

Branchi

Pantoli

Stornelli

et al. 2014

Circuit Theory & Apps

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In this paper, a high-Q floating active inductor (FAI), suitable for RF and microwave applications, is presented. The proposed FAI is based on two cascaded pairs of highly linear capacitance gyrators, which provide a symmetric and reciprocal structure. The proposed FAI shows fully symmetrical two-port characteristics, high quality factor and high linearity. As a feasibility demonstration, a prototype of the designed FAI has been fabricated, together with an LC series band-pass filter. At the operating frequency, the real part of the impedance of the equivalent FAI is very low (Req = 0.0039 Ω), providing a very high quality factor. The filter has a central frequency of 430 MHz and a À3 dB bandwidth of about 9 MHz. and that the model in Figure 1 is no more valid. In order to overcome this problem, the ideal circuit has been duplicated, as shown in Figure 6, being now symmetrical and reciprocal. Additionally, a simple RC-based compensating network with a symmetrical structure has been also added (see Figure 7), in order to have the circuit impedances as shown in Figure 3.The novel circuit configuration has been analyzed by means of the proposed equivalent model, optimizing eqns. (2), (3) and (4) to behave as in Figure 3. In Figure 8 the Z 1 , Z 2 and Z 3 impedances of the complete FAI of Figure 7 are shown. The imaginary part of Z 1 clearly shows the inductive Figure 3. Required impedance values versus frequency for the design of a floating active inductor as a π network.Figure 4. Cascaded gyrators with real components. 1098 P. BRANCHI ET AL.

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A new floating active inductor using resistive Feedback Technique

Cited by 17 publications

References 5 publications

A 0.3–5 GHz, low‐power, area‐efficient, high dynamic range variable gain low‐noise amplifier based on tunable active floating inductor technique

A 0.3–5 GHz, low‐power, area‐efficient, high dynamic range variable gain low‐noise amplifier based on tunable active floating inductor technique

A 1.7 2.5 GHz Active Inductor based Low Power Low Noise Amplifier for Multi Standard Applications

RF and microwave high‐Q floating active inductor design and implementation

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