A new generation of alloyed/multimetal chalcogenide nanowires by chemical transformation

Yang, Yuan; Wang, Kai; Liang, Haojun; Liu, Guoqiang; Feng, Mei; Xu, Liang; Liu, Jianwei; Wang, Jinlong; Yu, Shu‐Hong

doi:10.1126/sciadv.1500714

Cited by 61 publications

(52 citation statements)

References 45 publications

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“…Both Te nanotubes and Te x @Se y have a broadband optical absorption in the range from 260 to 1000 nm. However, unlike the Te nanotubes, the optical absorption spectra for Te x @Se y samples slightly increase after 320 nm, which can be ascribed to the outer Se layer . The corresponding band gap ( E g ) energies of Te nanotubes and Te x @Se y were measured by UV photoelectron spectroscopy (UPS), as shown in Figure B.…”

Section: Resultsmentioning

confidence: 99%

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Enhanced Photodetection Properties of Tellurium@Selenium Roll‐to‐Roll Nanotube Heterojunctions

Huang

Zhang

You

et al. 2019

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Non-layered tellurium (Te) is a promising material for applications in transistor and optoelectronic devices for its advantages in excellent intrinsic electronic and optoelectronic properties. However, the poor photodetection performance and relatively uncertain stability of tellurene under ambient conditions greatly limit the practical applications. In order to improve the performance of tellurene-based materials, Te@Se roll-to-roll nanotubes with different selenium (Se) contents synthesized by epitaxial growth of Se on Te nanotubes are, for the first time, employed to fabricate working electrodes for photoelectrochemical (PEC)-type broadband photodetection. They exhibit not only a preferably enhanced capacity for self-powered broadband photodetection but also significantly improved photocurrent density and stability in various aqueous environments (HCl, NaCl, and KOH solutions), compared to tellurene-based photodetectors. It is anticipated that the present work can open up new possibilities for high-performance tellurene-based optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

“…In this work, selenium (Se) was selected as the other component to form Te/Se heterostructure based on a few considerations. (i) Se belongs to the same group as Te in the periodic table, which has similar anisotropic and isomorphous characteristics . This allows Se to meet the demands of epitaxial growth on the Te nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Photodetection Properties of Tellurium@Selenium Roll‐to‐Roll Nanotube Heterojunctions

Huang

Zhang

You

et al. 2019

Small

144

108

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“…According to our previous work [33], Te x Se y @Se NWs can be obtained by using Te NWs as templates. 0.9 mmol of Cd(NO 3 ) 2 •4H 2 O, 40 mL of deionized water (DIW) and 0.9 mmol of Te x Se y @Se NWs solution ([Te]:[Se]=1:6) were mixed in a 100-mL Teflon-lined stainless steel autoclave under magnetic stirring.…”

Section: Synthesis Of Cdsete Ternary Alloy Nwsmentioning

confidence: 99%

Anti-photocorrosive photoanode with RGO/PdS as hole extraction layer

Liu

Yang

et al. 2020

Sci. China Mater.

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Photoelectrochemical (PEC) hydrogen production is of great interest as an ideal avenue towards clean and renewable energy. However, the instability and low energy conversion efficiency of photoanodes hinder their practical applications. Here we address these issues by introducing a hole extraction layer (HEL) which could rapidly transfer and consume photogenerated holes. The HEL is constructed by reduced graphene oxide (RGO) and other cocatalysts that enable rapid transfer and subsequent consumption of holes, respectively. Specifically, we showcase a high-stability photoanode composed of CdSeTe nanowires (CST NWs) and RGO/ PdS nanoparticles (PdS NPs) based HEL. The photoanode achieves excellent photocorrosion resistance, which allows stable hydrogen evolution for > 2 h at 0.5 V RHE .

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“…The degree of bonding anisotropy is intermediate between strongly layered and strongly 3D extremes, and these helical crystals have been described in the literature as both quasi-one-dimensional (1D) weakly bonded solids [25] and 1D van der Waals materials [26]. Anisotropic bonding in these materials is sufficient to permit synthesis of 1D nanowires [26][27][28][29][30][31][32] and two-dimensional (2D) flakes [33][34][35][36][37][38], as well as mechanical exfoliation of bulk crystals [39]. The relatively low melting (450 °C ) and boiling points (988 °C ) of Te permit 1D nanowires and 2D nano-flakes of Te to be easily synthesized via lowpressure physical vapor deposition (LP-PVD), as has been reported before [40,41].…”

Section: Nanowire Synthesismentioning

confidence: 99%

Growth and Strain Engineering of Trigonal Te for Topological Quantum Phases in Non-Symmorphic Chiral Crystals

et al. 2019

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Strained trigonal Te has been predicted to host Weyl nodes supported by a nonsymmorphic chiral symmetry. Using low-pressure physical vapor deposition, we systematically explored the growth of trigonal Te nanowires with naturally occurring strain caused by curvature of the wires. Raman spectra and high mobility electronic transport attest to the highly crystalline nature of the wires. Comparison of Raman spectra for both straight and curved nanowires indicates a breathing mode that is significantly broader and shifted in frequency for the curved wires. Strain induced by curvature during growth therefore may provide a simple pathway to investigate topological phases in trigonal Te.

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A new generation of alloyed/multimetal chalcogenide nanowires by chemical transformation

Abstract: A general chemical transformation process for synthesis of more than 45 kinds of one-dimensional metal chalcogenide nanostructure.

Cited by 61 publications

References 45 publications

Enhanced Photodetection Properties of Tellurium@Selenium Roll‐to‐Roll Nanotube Heterojunctions

Enhanced Photodetection Properties of Tellurium@Selenium Roll‐to‐Roll Nanotube Heterojunctions

Anti-photocorrosive photoanode with RGO/PdS as hole extraction layer

Growth and Strain Engineering of Trigonal Te for Topological Quantum Phases in Non-Symmorphic Chiral Crystals

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