A New GSG Pad Compact Model for Skin and Proximity Effect

Mawuli, Ernest Smith; Wu, Yunqiu; Kang, Kai; Sekyere, François

doi:10.1109/apmc46564.2019.9038205

Cited by 3 publications

(4 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It follows that the series impedance of the pad is obtained as reported in Ref. 11. The primary and the secondary inductance are derived as

L_{normalP} = \frac{im (Z_{11})}{ω}, L_{normalS} = \frac{im (Z_{22})}{ω}

…”

Section: The Parameter Extraction Methodologymentioning

confidence: 99%

“…Furthermore, during circuit application of the coupled inductors in a CMOS process, IC design invariably has their input/output terminals provided with ground‐signal‐ground (GSG) pads. Studies have revealed that, like other metals on dielectric and silicon, GSG pad exhibits high‐frequency characteristics which include high impedance due to ohmic loss, electromagnetic coupling, skin, and proximity effects 11,12 . When the GSG pad serves as an access point in the initial design, its impedance parameters affect that of the inductors.…”

Section: Introductionmentioning

confidence: 99%

“…Besides, such models are complex and consist of many parameters which cannot be easily adapted to investigate the combined coupling and impedance effects of the GSG pad on the coupled transformers. In this development, we have also published pad models which take into account mm‐wave effects such as the skin and proximity effects and radiation pattern of various pad layouts 11,20 …”

Section: Introductionmentioning

confidence: 99%

“…In this development, we have also published pad models which take into account mm-wave effects such as the skin and proximity effects and radiation pattern of various pad layouts. 11,20 Given these analyses, this report aims to analyze and propose a model that characterizes the intrinsic coupling parasitics dynamics of laterally coupled and stacked structures employed in the front-line design of RF/mm-wave IC in two coupling situations that resonate with the GSG pad's parasitic effects. Thus, first to comparatively model lateral and stacked coupling parasitics characteristics of coupled inductors simultaneously.…”

mentioning

confidence: 99%

See 3 more Smart Citations

Analysis of on‐chipGSGpads coupling effects on laterally‐coupled and double‐stacked inductors in the millimeter‐wave frequency regime

Mawuli

Kang

2023

Int J Numerical Modelling

Self Cite

View full text Add to dashboard Cite

On‐chip coupled inductors express huge nonuniform coupling tendencies, especially as frequency increases. This though desirable for wireless/galvanically isolated signal transfer but when mixed with the ground‐signal‐ground (GSG) pad could lead to a misrepresentative of the device's true coupling performance. To determine the coupling between the coupled inductors and that of the GSG pad an integrator analytical model investigating the total coupling effects of the GSG pad on laterally‐coupled and stacked inductors is presented in this study. The model characterizes the lateral and vertical coupling effects using lumped circuit elements with analytical equations. The coupling effects of each component are further decomposed and analyzed as electrical, magnetic, and combined effects. The electrical coupling effect, particularly that of the GSG pad, increases with frequency and impacts significantly on the coupled inductors and the substrate. The mm‐wave frequency characteristics such as skin and proximity effects of the inductors are also modeled by the double RL ladder network. The parameter extraction of the model is based on the measured S‐parameter data. The validation of the proposed model given the measured scattering parameter S21 dB achieves an RMSE of 0.0132 dB at 50 GHz. The inductor typology is most applicable to two‐port networks for impedance matching, cross‐coupled VCOs, and high‐speed communication networks.

show abstract

“…It follows that the series impedance of the pad is obtained as reported in Ref. 11. The primary and the secondary inductance are derived as